[HTML][HTML] Room temperature Mott metal–insulator transition in V2O3 compounds induced via strain-engineering
Vanadium sesquioxide (V 2 O 3) is an archetypal Mott insulator in which the atomic positions
and electron correlations change as temperature, pressure, and doping are varied, giving …
and electron correlations change as temperature, pressure, and doping are varied, giving …
Giant nonvolatile resistive switching in a Mott oxide and ferroelectric hybrid
Controlling the electronic properties of oxides that feature a metal–insulator transition (MIT)
is a key requirement for developing a new class of electronics often referred to as …
is a key requirement for developing a new class of electronics often referred to as …
Enhanced metal–insulator transition in V2O3 by thermal quenching after growth
The properties of oxides are critically controlled by the oxygen stoichiometry. Minimal
variations in oxygen content can lead to vast changes in their properties. The addition of …
variations in oxygen content can lead to vast changes in their properties. The addition of …
Evidence of the metal-insulator transition in ultrathin unstrained V2O3 thin films
L Dillemans, T Smets, RR Lieten, M Menghini… - Applied physics …, 2014 - pubs.aip.org
We report the strain state and transport properties of V 2 O 3 layers and V 2 O 3/Cr 2 O 3
bilayers deposited by molecular beam epitaxy on (0001)-Al 2 O 3. By changing the layer on …
bilayers deposited by molecular beam epitaxy on (0001)-Al 2 O 3. By changing the layer on …
Structure and enhanced thermochromic performance of low-temperature fabricated VO2/V2O3 thin film
For VO 2-based smart window manufacture, it is a long-standing demand for high-quality
thin films deposited at low temperature. Here, the thermochromic films of VO 2 were …
thin films deposited at low temperature. Here, the thermochromic films of VO 2 were …
Production of VO2 thin films through post-deposition annealing of V2O3 and VOx films
B Van Bilzen, P Homm, L Dillemans, CY Su… - Thin Solid Films, 2015 - Elsevier
VO 2 thin films were produced on sapphire and silicon substrates through post-deposition ex-
situ thermal treatment of V 2 O 3 and VO x films. Thin epitaxial films of V 2 O 3 on sapphire …
situ thermal treatment of V 2 O 3 and VO x films. Thin epitaxial films of V 2 O 3 on sapphire …
Substrate-induced disorder in V2O3 thin films grown on annealed c-plane sapphire substrates
J Brockman, MG Samant, KP Roche… - Applied Physics …, 2012 - pubs.aip.org
We investigate the structural and electronic properties of V 2 O 3 thin films deposited by
oxygen plasma-assisted molecular beam epitaxy onto annealed and unannealed c-plane …
oxygen plasma-assisted molecular beam epitaxy onto annealed and unannealed c-plane …
Chemical, structural and electronic properties of ultrathin V2O3 films on Al2O3 substrate: Implications in Mott-like transitions
V 2 O 3 presents a complex interrelationship between the metal–insulator transition and the
structural rhombohedral-monoclinic one in temperature, as a function of sample thickness …
structural rhombohedral-monoclinic one in temperature, as a function of sample thickness …
Structural morphology and electrical transitions of V2O3 thin films grown on SiO2/Si by high power impulse magnetron sputtering
The study presents the synthesis of V 2 O 3 films on thermally oxidized Si (001) substrates
by reactive high power impulse magnetron sputtering. The effect of film thickness and …
by reactive high power impulse magnetron sputtering. The effect of film thickness and …
Efficient direct band-gap transition in germanium by three-dimensional strain
S Mellaerts, V Afanas' ev, JW Seo… - … Applied Materials & …, 2021 - ACS Publications
Complementary to the development of highly three-dimensional (3D) integrated circuits in
the continuation of Moore's law, there has been a growing interest in new 3D deformation …
the continuation of Moore's law, there has been a growing interest in new 3D deformation …