Assessing the analog/RF and linearity performances of FinFET using high threshold voltage techniques
One of the severe issues of the downscaling of semiconductor devices is the threshold
voltage reduction which significantly increases the leakage current. Thus, high threshold …
voltage reduction which significantly increases the leakage current. Thus, high threshold …
A new characterization model of FinFET self-heating effect based on FinFET characteristic parameter
Y Wang, H Liang, H Zhang, D Li, Y Lu, M Yi… - Microelectronic …, 2024 - Elsevier
The characterization of the self-heating effect (SHE) has been an important research topic in
advanced technology, but the existing characterizations are few and the characterization …
advanced technology, but the existing characterizations are few and the characterization …
A New Self-Heating Effect Prediction Model Based on Distributed Thermal Resistance and Power
Z Shao, H Liang, H Zhang, M Yi, Y Wang… - Available at SSRN … - papers.ssrn.com
Abstract Analysis and prediction of self-heating effect (SHE) network modeling are important
elements in nano-device research. This paper carries out SHE network modeling and …
elements in nano-device research. This paper carries out SHE network modeling and …
A New Self-Heating Effect Prediction Model Based on Distributed Thermal Resistance and Power
Y Wang, H Liang, D Li, H Zhang, Z Shao… - Available at SSRN … - papers.ssrn.com
Abstract Analysis and prediction of self-heating effect (SHE) network modeling are important
elements in nano-device research. This paper carries out SHE network modeling and …
elements in nano-device research. This paper carries out SHE network modeling and …