A comprehensive study of short-circuit ruggedness of silicon carbide power MOSFETs
The behavior of silicon carbide (SiC) power MOSFETs under stressful short-circuit (SC)
conditions is investigated in this paper. Two different SC failure phenomena for SiC power …
conditions is investigated in this paper. Two different SC failure phenomena for SiC power …
Modeling of wide bandgap power semiconductor devices—Part I
HA Mantooth, K Peng, E Santi… - IEEE Transactions on …, 2014 - ieeexplore.ieee.org
Wide bandgap power devices have emerged as an often superior alternative power switch
technology for many power electronic applications. These devices theoretically have …
technology for many power electronic applications. These devices theoretically have …
Circuit models of power MOSFETs leading the way of GaN HEMT modelling—A review
Gallium nitride high-electron-mobility transistor (GaN HEMT) is a key enabling technology
for obtaining high-efficient and compact power electronic systems. At the design stage of a …
for obtaining high-efficient and compact power electronic systems. At the design stage of a …
Short-circuit failure mechanism of SiC power MOSFETs
Failure mechanisms during short-circuit conditions of Silicon Carbide Power MOSFETs are
analysed in this work, and a possible theoretical explanation is provided. Insight into the …
analysed in this work, and a possible theoretical explanation is provided. Insight into the …
A temperature-dependent SPICE model of SiC power MOSFETs for within and out-of-SOA simulations
This paper presents a temperature-dependent SPICE model for SiC power MOSFETs. The
model describes the static and dynamic behavior and accounts for leakage current and …
model describes the static and dynamic behavior and accounts for leakage current and …
A physics-based compact model of SiC power MOSFETs
R Kraus, A Castellazzi - IEEE Transactions on Power …, 2015 - ieeexplore.ieee.org
The presented compact model of SiC power MOSFETs is based on a thorough
consideration of the physical phenomena which are important for the device characteristics …
consideration of the physical phenomena which are important for the device characteristics …
Comparison and analysis of short circuit capability of 1200V single-chip SiC MOSFET and Si IGBT
Short circuit capability of commercial SiC MOSFETs is analyzed, which is compared with that
of commercial Si IGBTs. Junction temperatures during short circuit tests are analyzed in this …
of commercial Si IGBTs. Junction temperatures during short circuit tests are analyzed in this …
Circuit-based electrothermal simulation of power devices by an ultrafast nonlinear MOR approach
L Codecasa, V d'Alessandro… - IEEE Transactions on …, 2015 - ieeexplore.ieee.org
This paper presents an efficient circuit-based approach for the nonlinear dynamic
electrothermal simulation of power devices and systems subject to radical self-heating. The …
electrothermal simulation of power devices and systems subject to radical self-heating. The …
[HTML][HTML] Compact modeling of a 3.3 kv sic mosfet power module for detailed circuit-level electrothermal simulations including parasitics
In this paper, an advanced electrothermal simulation strategy is applied to a 3.3 kV silicon
carbide MOSFET power module. The approach is based on a full circuital representation of …
carbide MOSFET power module. The approach is based on a full circuital representation of …
Computational Efficiency Analysis of SiC MOSFET Models in SPICE: Static Behavior
BW Nelson, AN Lemmon, BT DeBoi… - IEEE Open Journal …, 2020 - ieeexplore.ieee.org
Transient simulation of complex converter topologies is a challenging problem, especially in
detailed analysis tools like SPICE. Much of the recent literature on SPICE transistor …
detailed analysis tools like SPICE. Much of the recent literature on SPICE transistor …