BCN materials with varied structures are attracting attention for promising diverse
applications. BCN materials are recognized for adaptable electrical properties, outstanding …

We review the latest studies that address the fundamental understanding of low-k dielectric
electrical properties and reliability. We focus on the results discussing the nature of process …

Organosilicate-glass-based low-κ films containing both terminal methyl groups and an
ethylene bridge between the silicon atoms are spin-on deposited by using 1, 2-bis …

To provide high speed, low dynamic power dissipation, and low cross-talk noise for
microelectronic circuits, low-dielectric-constant (low-k) materials are required as the inter …

Impact of carbon-doping on time dependent dielectric breakdown (TDDB) of three SiO 2-
based films was investigated under two different breakdown mechanisms, one involving Cu …

Low-k dielectric silicon carbonitride (SiC x N y) films are deposited by plasma-enhanced
chemical vapor deposition using a carbon-rich silazane precursor, N-methyl-aza-2, 2, 4 …

Vacuum ultraviolet (VUV) irradiation is generated during plasma processing in
semiconductor fabrications, while the effect of VUV irradiation on the dielectric constant (k …

Ti O 2 in the rutile phase is known to be an incipient ferroelectric. Considering Nb-Cr
codoping we examine if ferroelectricity can be induced at the low doping limit in T i (1-x)(N b …

Vacuum ultraviolet (VUV) photoemission spectroscopy is utilized to investigate the
distribution of trapped charges within the bandgap of low dielectric constant (low-k) …

Dynamic tunneling force microscopy (DTFM) is applied to the study of point defects in an
inter-layer dielectric film. A recent development enables simultaneous acquisition of DTFM …