Bandgap lowering in mixed alloys of Cs 2 Ag (Sb x Bi 1− x) Br 6 double perovskite thin films
Halide double perovskites have gained significant attention, owing to their composition of
low-toxicity elements, stability in air and long charge-carrier lifetimes. However, most double …
low-toxicity elements, stability in air and long charge-carrier lifetimes. However, most double …
InGaN platelets: synthesis and applications toward green and red light-emitting diodes
In this work, we present a method to synthesize arrays of hexagonal InGaN submicrometer
platelets with a top c-plane area having an extension of a few hundred nanometers by …
platelets with a top c-plane area having an extension of a few hundred nanometers by …
Excitons in a disordered medium: A numerical study in InGaN quantum wells
A David, C Weisbuch - Physical Review Research, 2022 - APS
Excitons in InGaN quantum wells are investigated numerically, considering random alloy
disorder and Coulomb interaction on equal footing in the Schrödinger equation. Their …
disorder and Coulomb interaction on equal footing in the Schrödinger equation. Their …
Carrier recombination in nitride-based light-emitting devices: Multiphonon processes, excited defects, and disordered heterointerfaces
G Savchenko, E Shabunina, A Chernyakov… - Nanomaterials, 2024 - mdpi.com
We study recombination processes in nitride LEDs emitting from 270 to 540 nm with EQE
ranging from 4% to 70%. We found a significant correlation between the LEDs' electro …
ranging from 4% to 70%. We found a significant correlation between the LEDs' electro …
Simulating random alloy effects in III-nitride light emitting diodes
A Di Vito, A Pecchia, A Di Carlo… - Journal of Applied …, 2020 - pubs.aip.org
Statistical fluctuations in the alloy composition on the atomic scale can have important
effects on electronic and optical properties of bulk materials and devices. In particular …
effects on electronic and optical properties of bulk materials and devices. In particular …
Three-Dimensional Modeling of Minority-Carrier Lateral Diffusion Length Including Random Alloy Fluctuations in (,) and (,) Single Quantum Wells
For nitride-based (In, Ga) N and (Al, Ga) N quantum-well (QW) light-emitting diodes (LEDs),
the potential fluctuations caused by natural alloy disorders limit the lateral intra-QW carrier …
the potential fluctuations caused by natural alloy disorders limit the lateral intra-QW carrier …
Three dimensional simulation on the transport and quantum efficiency of UVC-LEDs with random alloy fluctuations
The active regions of ultraviolet light emitting diodes (UVLEDs) for UVB and ultra-violet band
C wavelengths are composed of AlGaN alloy quantum barriers (QBs) and quantum wells …
C wavelengths are composed of AlGaN alloy quantum barriers (QBs) and quantum wells …
[HTML][HTML] Alloy disorder limited mobility of InGaN two-dimensional electron gas
P Sohi, JF Carlin, N Grandjean - Applied Physics Letters, 2018 - pubs.aip.org
The mobility of an InGaN based two-dimensional electron gas is determined for an indium
content ranging from 0 to 20%. While the electron density remains constant at∼ 2.5× 10 13 …
content ranging from 0 to 20%. While the electron density remains constant at∼ 2.5× 10 13 …
Impact of Compositional Nonuniformity in -Based Light-Emitting Diodes
Carrier localization due to statistical fluctuations in indium gallium nitride alloys has been
recognized to play an important role for the performance of light-emitting diodes, both …
recognized to play an important role for the performance of light-emitting diodes, both …
Localization effect in photoelectron transport induced by alloy disorder in nitride semiconductor compounds
M Sauty, NMS Lopes, JP Banon, Y Lassailly… - Physical Review Letters, 2022 - APS
Near-band-gap photoemission spectroscopy experiments were performed on p-GaN and p-
InGaN/GaN photocathodes activated to negative electron affinity. The photoemission …
InGaN/GaN photocathodes activated to negative electron affinity. The photoemission …