Photocarrier Recombination Dynamics in Highly Scattering Cu2O Nanocatalyst Clusters
Inversion analysis of transient absorption data to capture the photoexcited charge carrier
population rate dynamics is a powerful technique for extracting realistic lifetimes and …
population rate dynamics is a powerful technique for extracting realistic lifetimes and …
Recombination efficiency in c-plane (In, Ga) N/GaN quantum wells: saturation of localisation sites versus Auger–Meitner recombination
RM Barrett, DD Dyer, JM McMahon… - Journal of Physics D …, 2024 - iopscience.iop.org
Light emitting diodes based on c-plane (In, Ga) N/GaN quantum wells (QWs) can have>
90% emission efficiency at modest current densities but this drops significantly at higher …
90% emission efficiency at modest current densities but this drops significantly at higher …
Interfacial modulation and plasmonic effect mediated high-brightness green light sources in a single Ga-doped ZnO microwire based heterojunction
X Liu, M Liu, R Zhu, B Li, P Wan, D Shi, C Kan… - …, 2022 - pubs.rsc.org
Heterostructure manufacturing has been extensively studied as an indispensable footstone
in progressive semiconductor optoelectronic devices due to the constituent materials …
in progressive semiconductor optoelectronic devices due to the constituent materials …
Carrier dynamics in cuprous oxide-based nanoparticles and heterojunctions
S Gyawali, RTA Tirumala… - Ultrafast Phenomena …, 2024 - spiedigitallibrary.org
Nanoparticles of cuprous oxide with and without Pd-coatings are explored for charge carrier
dynamics that can influence efficiency in applications of solar photocatalysis. Transient …
dynamics that can influence efficiency in applications of solar photocatalysis. Transient …
Investigating defects in InGaN based optoelectronics: from material and device perspective
III-nitride optoelectronics have revolutionized solid-state lighting technology. However, non-
radiative defects play a major bottleneck in determining the performance of InGaN-based …
radiative defects play a major bottleneck in determining the performance of InGaN-based …