A model of electric field distribution in gate oxide and JFET-region of 4H-SiC DMOSFETs
L Di Benedetto, GD Licciardo… - … on Electron Devices, 2016 - ieeexplore.ieee.org
For the first time, a full analytical model of the electric field in the gate oxide of 4H-polytype
silicon carbide (4H-SiC) power double-implanted MOSFET devices is shown. It takes into …
silicon carbide (4H-SiC) power double-implanted MOSFET devices is shown. It takes into …
Analytical model and design of 4H-SiC planar and trenched JBS diodes
L Di Benedetto, GD Licciardo… - … on Electron Devices, 2016 - ieeexplore.ieee.org
An analytical instrument to design 4H-SiC planar and trenched junction barrier Schottky
(JBS) diodes is proposed. The tool is based on a novel full analytical description of the …
(JBS) diodes is proposed. The tool is based on a novel full analytical description of the …
Analytical model of the forward operation of 4H-SiC vertical DMOSFET in the safe operating temperature range
GD Licciardo, S Bellone… - IEEE Transactions on …, 2014 - ieeexplore.ieee.org
A new analytical model of 4H-SiC DMOSFETs that is useful to explore their thermal stability
is presented. The model is capable to describe, with closed-form equations, the dc forward …
is presented. The model is capable to describe, with closed-form equations, the dc forward …
V2O5/4H-SiC Schottky Diode Temperature Sensor: Experiments and Model
Performances of temperature sensors based on Divanadium Pentoxide/4H polytype of
silicon carbide, V 2 O 5/4H-SiC, and Schottky diodes are analyzed. The devices with an …
silicon carbide, V 2 O 5/4H-SiC, and Schottky diodes are analyzed. The devices with an …
A 4H-SiC UV phototransistor with excellent optical gain based on controlled potential barrier
L Di Benedetto, GD Licciardo… - … on Electron Devices, 2019 - ieeexplore.ieee.org
In this article, we report the experimental results of a visible-light-blind 4H-polytype silicon
carbide phototransistor able to detect ultraviolet (UV) radiations for wavelengths lower than …
carbide phototransistor able to detect ultraviolet (UV) radiations for wavelengths lower than …
On the crossing-point of 4H-SiC power diodes characteristics
The presence of crossing points in the forward JD-VD curves of 4H-SiC pin diodes is
analyzed by means of numerical and analytical models. The analysis allows one to justify …
analyzed by means of numerical and analytical models. The analysis allows one to justify …
Analysis of the performances of a fully 4H-SiC insultated DC/AC converters
A complex power converter system is realized with only 4H-SiC devices. It is a DC/AC power
converter with an isolation of 4kVdc and made by two stages: a DC/DC Phase Shift Full …
converter with an isolation of 4kVdc and made by two stages: a DC/DC Phase Shift Full …
A novel 4H-SiC UV photo-transistor based on a shallow mesa structure
L Di Benedetto, GD Licciardo… - ESSDERC 2019-49th …, 2019 - ieeexplore.ieee.org
In this paper we report the first experimental results of a novel 4H-polytype Silicon Carbide
Ultra-Violet Photo-Transistor. It is a vertical structure based on a shallow n-type mesa …
Ultra-Violet Photo-Transistor. It is a vertical structure based on a shallow n-type mesa …
[PDF][PDF] The Meterglob Project: Impact of fault current division and of extraneous conductive parts on Global Earthing Systems
The paper presents the Meterglob Project, focused on practical tools to assess Global
Earthing Systems in an urbanized area with a dense MV/LV distribution network. Present …
Earthing Systems in an urbanized area with a dense MV/LV distribution network. Present …
Novel advanced analytical design tool for 4H-SiC VDMOSFET devices
L di Benedetto, GD Licciardo, T Erlbacher… - Materials Science …, 2017 - Trans Tech Publ
An analytical tool to design 4H-SiC power vertical Double-diffused Metal-Oxide-
Semiconductor Field-Effect-Transistor is proposed. The model optimizes, in terms of the …
Semiconductor Field-Effect-Transistor is proposed. The model optimizes, in terms of the …