In order to see an interlayer on the electrical parameters and conduction mechanisms
(CMs), both the metal–semiconductor (MS) and Au/(MgO-PVP)/n-Si Schottky diodes (SDs) …

We have investigated the temperature dependent current–voltage (I–V) characteristics of Ti
Schottky contacts to p-type InP. The Ti/p-type InP Schottky diode yielded an ideality factor of …

To investigate the effect of 2% graphene cobalt (GC)-doped (Ca 3 Co 4 Ga 0.001 O x)
interfacial layer on the main electrical parameters, Au/n-Si (MS) Schottky barrier diodes …

We synthesized a thin film of Au nanoparticles-decorated Congo red (CR) dye on both n-Si
and p-Si substrates by the spin coating technique. UV–Vis spectrometer was used to …

Si 3 N 4 films were deposited on n-type silicon substrate by the radio frequency magnetron
sputtering technique. The current–voltage (I–V) characteristics of Au/Si 3 N 4/n-Si (metal …

In this study, GaAs-based Schottky diode is fabricated by Al metal contact and Al0. 95Ga0.
5As interface layer. Thin film layer is epitaxially grown on GaAs with high ratio of Al in the …

Abstract Al/Zn-complex/p-Si/Al metal-polymer-semiconductor (MPS) diode is deposited by
using thermal evaporation technique for metal layers and spin-coating technique for polymer …

We fabricated undoped and Cu doped TiO 2 thin films by spin coating technique and
employed the films as interfacial oxide layer between the Al and n-type Si to investigate the …

The structural and optical properties of CdS films deposited by evaporation were
investigated. X-ray diffraction study showed that CdS films were polycrystalline in nature with …

Illumination intensity effects on the electrical characteristics of Al–TiW–Pd2Si/n-Si Schottky
structures have been investigated in this study for the first time. The electrical parameters …