Ferroelectric order in van der Waals layered materials

D Zhang, P Schoenherr, P Sharma… - Nature Reviews Materials, 2023 - nature.com
Structurally different from conventional oxide ferroelectrics with rigid lattices, van der Waals
(vdW) ferroelectrics have stable layered structures with a combination of strong intralayer …

Layer-structured anisotropic metal chalcogenides: recent advances in synthesis, modulation, and applications

A Giri, G Park, U Jeong - Chemical Reviews, 2023 - ACS Publications
The unique electronic and catalytic properties emerging from low symmetry anisotropic (1D
and 2D) metal chalcogenides (MCs) have generated tremendous interest for use in next …

Phase-controllable large-area two-dimensional In2Se3 and ferroelectric heterophase junction

W Han, X Zheng, K Yang, CS Tsang, F Zheng… - Nature …, 2023 - nature.com
Memory transistors based on two-dimensional (2D) ferroelectric semiconductors are
intriguing for next-generation in-memory computing. To date, several 2D ferroelectric …

Controllable CO2 electrocatalytic reduction via ferroelectric switching on single atom anchored In2Se3 monolayer

L Ju, X Tan, X Mao, Y Gu, S Smith, A Du, Z Chen… - Nature …, 2021 - nature.com
Efficient and selective CO2 electroreduction into chemical fuels promises to alleviate
environmental pollution and energy crisis, but it relies on catalysts with controllable product …

Sub-10 nm two-dimensional transistors: Theory and experiment

R Quhe, L Xu, S Liu, C Yang, Y Wang, H Li, J Yang… - Physics Reports, 2021 - Elsevier
Presently Si-based field-effect transistors (FETs) are approaching their physical limit, and
further scaling their gate length down to the sub-10 nm region is becoming extremely …

[HTML][HTML] Production and processing of graphene and related materials

C Backes, AM Abdelkader, C Alonso… - 2D …, 2020 - iopscience.iop.org
We present an overview of the main techniques for production and processing of graphene
and related materials (GRMs), as well as the key characterization procedures. We adopt …

A ferroelectric semiconductor field-effect transistor

M Si, AK Saha, S Gao, G Qiu, J Qin, Y Duan, J Jian… - Nature …, 2019 - nature.com
Ferroelectric field-effect transistors employ a ferroelectric material as a gate insulator, the
polarization state of which can be detected using the channel conductance of the device. As …

Intrinsic electric fields in two-dimensional materials boost the solar-to-hydrogen efficiency for photocatalytic water splitting

CF Fu, J Sun, Q Luo, X Li, W Hu, J Yang - Nano letters, 2018 - ACS Publications
Two-dimensional (2D) materials with the vertical intrinsic electric fields show great promise
in inhibiting the recombination of photogenerated carriers and widening light absorption …

Two‐dimensional In2Se3: A rising advanced material for ferroelectric data storage

YT Huang, NK Chen, ZZ Li, XP Wang, HB Sun… - InfoMat, 2022 - Wiley Online Library
Ferroelectric memory is a promising candidate for next‐generation nonvolatile memory
owing to its outstanding performance such as low power consumption, fast speed, and high …

Exploring two-dimensional materials toward the next-generation circuits: from monomer design to assembly control

M Zeng, Y Xiao, J Liu, K Yang, L Fu - Chemical reviews, 2018 - ACS Publications
Two-dimensional (2D) materials have attracted tremendous research interest since the
breakthrough of graphene. Their unique optical, electronic, and mechanical properties hold …