Origin of post-irradiation Vth-shift variability in 3D-NAND memory array
MA Kumar, M Raquibuzzaman… - … on Nuclear Science, 2023 - ieeexplore.ieee.org
In this article, we report total-ionizing-dose (TID)-induced threshold-voltage () shift
characteristics of commercial-off-the-shelf (COTS) 64-layer 3-D NAND flash memory chips …
characteristics of commercial-off-the-shelf (COTS) 64-layer 3-D NAND flash memory chips …
Total-ionizing-dose effects on threshold voltage distribution of 64-layer 3D NAND memories
MA Kumar, M Raquibuzzaman… - 2022 IEEE Radiation …, 2022 - ieeexplore.ieee.org
We measure total-ionizing-dose (TID) induced threshold voltage \left(V_t\right) loss of a
commercial 64-layer triple-level-cell (TLC) 3D NAND memory using user-mode commands …
commercial 64-layer triple-level-cell (TLC) 3D NAND memory using user-mode commands …
Towards Improving Ionizing Radiation Tolerance of 3-D NAND Flash Memory
In this paper we present characterization results of total ionizing dose (TID) effects on
commercial 3-D NAND memory. We show the TID induced threshold voltage shift and bit …
commercial 3-D NAND memory. We show the TID induced threshold voltage shift and bit …
Electrostatic Shielding of NAND Flash Memory from Ionizing Radiation
M Buddhanoy, B Ray - 2023 IEEE International Reliability …, 2023 - ieeexplore.ieee.org
In this paper, we propose and experimentally evaluate an electrostatic shielding technique
to protect the health of flash memory cells from ionizing radiation effects. The technique is …
to protect the health of flash memory cells from ionizing radiation effects. The technique is …
[图书][B] Total-Ionizing-Dose Effects on Commercial 3-D NAND Flash Memory Chips
MA Kumar - 2023 - search.proquest.com
Commercial NAND flash memories are very attractive for space applications, characterized
by their compact form factor, low weight, high bit density, and energy-efficient performance …
by their compact form factor, low weight, high bit density, and energy-efficient performance …