Atomic layer deposition of high-k dielectrics on III–V semiconductor surfaces
T Gougousi - Progress in Crystal Growth and Characterization of …, 2016 - Elsevier
The goal of this article is to provide an overview of the state of knowledge regarding the
Atomic Layer Deposition (ALD) of metal oxides on III–V semiconductor surfaces. An …
Atomic Layer Deposition (ALD) of metal oxides on III–V semiconductor surfaces. An …
25-W 915-nm lasers with window structure fabricated by impurity-free vacancy disordering (IFVD)
H Taniguchi, H Ishii, R Minato, Y Ohki… - IEEE Journal of …, 2007 - ieeexplore.ieee.org
We have demonstrated high-performance broad-area single-emitter lasers with window
structure fabricated by newly developed impurity-free vacancy disordering (IFVD) technique …
structure fabricated by newly developed impurity-free vacancy disordering (IFVD) technique …
[PDF][PDF] 对915 nm InGaAsP/GaAsP 初次外延片量子阱混杂的研究
何天将， 井红旗， 朱凌妮， 刘素平， 马骁宇 - Acta Optica Sinica, 2022 - researching.cn
摘要高输出功率和长期可靠性是高功率半导体激光器得以广泛应用的前提, 但高功率密度下腔面
退化导致的光学灾变损伤(COD) 制约了激光器的最大输出功率和可靠性. 为了提高 …
退化导致的光学灾变损伤(COD) 制约了激光器的最大输出功率和可靠性. 为了提高 …
Indium Diffusion and Native Oxide Removal during the Atomic Layer Deposition (ALD) of TiO2 Films on InAs(100) Surfaces
L Ye, T Gougousi - ACS Applied Materials & Interfaces, 2013 - ACS Publications
A thermal atomic layer deposition (ALD) process with tetrakis (dimethylamino) titanium and
H2O as reagents has been used to deposit TiO2 films on native oxide and etched InAs (100) …
H2O as reagents has been used to deposit TiO2 films on native oxide and etched InAs (100) …
Influence of SiO2 and TiO2 dielectric layers on the atomic intermixing of InxGa1− xAs/InP quantum well structures
We have studied the influence of SiO 2 and TiO 2 dielectric layers on the atomic intermixing
of In x Ga 1− x As/InP quantum well structures using the impurity-free vacancy disordering …
of In x Ga 1− x As/InP quantum well structures using the impurity-free vacancy disordering …
Suppressed intermixing in InAlGaAs/AlGaAs/GaAs and AlGaAs/GaAs quantum well heterostructures irradiated with a KrF excimer laser
J Genest, JJ Dubowski, V Aimez - Applied Physics A, 2007 - Springer
The influence of gallium arsenide surface modification induced by irradiation with a KrF
excimer laser on the magnitude of the quantum well (QW) intermixing effect has been …
excimer laser on the magnitude of the quantum well (QW) intermixing effect has been …
Studying the suppression of quantum well intermixing in primary epitaxial wafers via oxygen ion bombardment
T He, S Liu, W Li, X Ma - Optical Review, 2024 - Springer
In the pursuit of creating non-absorption window (NAW) structures in high-power
semiconductor laser cavities, techniques like impurity-free vacancy diffusion and rapid …
semiconductor laser cavities, techniques like impurity-free vacancy diffusion and rapid …
Enhancement of quantum well intermixing on InP∕ InGaAs∕ InGaAsP heterostructures using titanium oxide surface stressors to induce forced point defect diffusion
Quantum well intermixing was studied on In P∕ In Ga As∕ In Ga As P heterostructures
under stress induced by a Ti O x surface stressor. Results provide a comparison of thermal …
under stress induced by a Ti O x surface stressor. Results provide a comparison of thermal …
Crystallization and segregation in vitreous rutile films annealed at high temperature
Vitreous titania films with rutile short-range order were sputter deposited on unheated fused
silica substrates, sequentially annealed at 973 and 1273 K, and examined by Raman …
silica substrates, sequentially annealed at 973 and 1273 K, and examined by Raman …
Effect of Rapid Thermal Annealing on the Atomic Intermixing of Zn-and C-Doped InGaAs∕ AlGaAs Quantum Well Laser Structures
We have studied the effect of annealing on the atomic intermixing of Zn-and C-doped laser
structures. Electrochemical capacitance voltage measurements revealed that the carrier …
structures. Electrochemical capacitance voltage measurements revealed that the carrier …