The design of CMOS circuits using nanoscale MOSFET has become very difficult nowadays
as device modeling faces new challenges such as short channel effects and mobility …

A subthreshold analytical model for Dual Material Double Gate Junctionless Tunnel FET
(DMDG JLTFET) is developed. To analyze the behavior of short channel device, relevant …

This paper deals with the analytical modelling of high-k stacked Gate-All-Around
Heterojunction Tunnel Field Effect Transistor (GAA-HJTFET) considering the depletion …

The performance of TFET biosensors is considered to be remarkable as it is has shown
strong immunity towards the non-ideal effects occurring in conventional CMOS-based …

Abstract Stacked Dielectric Triple Material Cylindrical Gate All Around (SD-TM-CGAA)
Junctionless MOSFET has been explored for low power applications. This paper presents …

This paper presents a novel threshold voltage model for triple material gate-all-around TFET
based on its surface potential that also includes the device depletion regimes. Analytical …

An improved subthreshold analytical model of Dual Material Double Gate Junctionless
Tunnel FET (DMDG JLTFET) with stacked/hetero-dielectric gate oxide structure is proposed …

In this paper, a subthreshold analytical model for Triple Material Gate-All-Around (TMGAA)
Junctionless Tunnel FET (JLTFET) with Germanium and High-K gate dielectric material is …

We have developed an analytical model of channel potential and threshold voltage of a gate‐
engineered heterostructure transistor, triple material gate aluminum gallium nitride …

In this paper a new analytical modeling of Conical Gate-All-Around Tunnel Field Effect
Transistor has been proposed and verified by TCAD Simulation. The Electrostatic …