The past decade has seen rapid progress in research into high-performance Ge-on-Si
photodetectors. Owing to their excellent optoelectronic properties, which include high …

The arrival of the big data era has driven the rapid development of high-speed optical
signaling and processing, ranging from long-haul optical communication links to short-reach …

In recent years, optical modulators, photodetectors,(de) multiplexers, and heterogeneously
integrated lasers based on silicon optical platforms have been verified. The performance of …

High speed photodetectors are a key building block, which allow a large wavelength range
of detection from 850 nm to telecommunication standards at optical fiber band passes of 1.3 …

Silicon photonics is being extended from the near‐infrared window of 1.3–1.5 µm for optical
fiber communications to the mid‐infrared (mid‐IR) wavelength‐band of 2 µm or longer for …

GeSn heterojunction photodetectors on Si substrates were grown with Sn concentration up
to 4%, fabricated for vertical light incidence, and characterized. The complete layer structure …

GeSn heterojunction pin diodes with a Sn content of 0.5% are grown with a special low
temperature molecular beam epitaxy. The Sn incorporation in Ge is facilitated by a very low …

We report the experimental demonstration of a germanium metal-semiconductor-metal
(MSM) photodetector integrated in a SOI rib waveguide. Femtosecond pulse and frequency …

Photodetectors hold a critical position in optoelectronic integrated circuits, and they convert
light into electricity. Over the past decades, high-performance photodetectors (PDs) have …

The family of photodetectors plays an important role in multiple applications. Extensive
research and continuous development of photodetectors has enriched their functionalities …