This article discusses the robustness of field-plate-assisted reduced surface field effect
(RESURF) DMOS designs to time-dependent latch-up within a single dielectrically isolated …

The methodology for the measurement of the knee voltage and maximum collector current
for the linear operation of bipolar transistors is described and demonstrated on the …

The impact of collector region design on large-signal performance of horizontal current
bipolar transistor (HCBT) technology is investigated by calibrated time-domain load-pull …

In this work we present the first Low Frequency Noise results obtained on the new 55 nm
BiCMOS technology developed by STMicroelectronics. With this improved technology at …

The development of new BiCMOS technology will be possible, thanks to the SiGe: CHBTs
technological improvements to reach dynamic performance beyond 0.5 THz. Animportant …

We derive a generalized expression for the threshold current of the Kirk effect (base
widening) in bipolar transistors that have a fully depleted collector and a nonuniform dopant …

The large-signal performance of the horizontal current bipolar transistor (HCBT) is
investigated by extensive measurements and simulations, and its suitability for the …

An initial literature study combined with some basic comparative simulations has been
performed on different electricfield modulation techniques and the subsequent reliability …

Characteristics of lateral diffused metal–oxide–semiconductor (LDMOS) transistors with
gradual junction profile by self-alignment implant through dual thicknesses of screen oxide …

The demand for bandwidth intensive applications has increased significantly in the last
decade. Applications such as video streaming, cloud-based computing, cloud storage and …