Gallium Nitride power devices are poised to replace silicon-based MOSFETs in power
switching applications having weight and volume constraints, while simultaneously needing …

In this article, a new metal-semiconductor field-effect transistor (MESFET) is introduced by
amending the carrier distribution in the active regions of the device for radio frequency …

In this paper, a novel silicon-on-insulator (SOI) metal-semiconductor field-effect transistor
(MESFET) with modified charge distribution is presented. Changing charge distribution …

In this paper, a new efficient technique is used in silicon-on-insulator metal–semiconductor
field-effect transistors (SOI MESFETs) to simultaneously increase the breakdown voltage …

In this paper, a new structure for silicon on insulator (SOI) metal semiconductor field effect
transistor (MESFET) is proposed. This new structure improves DC and RF characteristics of …

Silicon‐on‐insulator junctionless transistor (SOI‐JLT) is introduced as an efficient device for
nanoscale destinations. Moreover, critical lattice temperature and high leakage current are …

Potential distribution of a silicon-on-insulator metal-semiconductor field effect transistor (SOI-
MESFET) is successfully controlled by introducing a new structure. The structure we …

An increasing concern amongst designers and integrators of military and defense-related
systems is the underlying security of the individual microprocessor components that make …

This paper presents an efficient structure for silicon on insulator metal semiconductor FETs.
In this structure, by using two symmetrical SiO 2 pieces on both sides of the channel and …

In this paper a novel silicon on insulator metal-semiconductor field effect transistor is
proposed for high voltage and radio frequency applications. This structure includes …