A strong adhesion force between resist and underlayer materials was employed to reduce
resist pattern peeling generated from de-molding in step-and-flash imprint lithography …

(52) US Cl......... r 134/1.3; 510/175; 510/176 Improved compositions and processes for
removing photore (58) Field of Classification Search.................. 134/1.3: sists, polymers, post …

Improved compositions and processes for removing photoresists, polymers, post etch
residues, and post oxygen ashing residues from interconnect, wafer level packaging, and …

A memory device comprising a vertical transistor includes a digit line that is directly coupled
to the source regions of each memory cell. Because an electrical plug is not used to form a …

In the present paper, we describe a novel class of bottom antireflective coating (BARC) and
gap fill materials using dextrin with a-glycoside bonds in a polysaccharide. ArF resist …

3.941, 629 A 3, 1976 Jaffe ured to reduce any short channel effect on the reduced size 4.
139442 A 2f1979 Bondur et al. memory cells. In addition, the memory cells may advanta …

Sublimate reduction from the new bottom antireflective coating (BARC) and gap fill materials
in bake process was investigated by means of absorption spectroscopy and the quantitative …

High planarizing gap fill materials based on β-cyclodextrin in ArF photoresist under-layer
materials have been developed for fast etching in CF 4 gas. Gap fill materials used in the via …

The use of conventional thermal cross-link materials such as negative resists, antireflective
coating, and planarizing layers does not lead to excellent planarization for multilevel …

The via-first dual damascene process is the current manufacturing technology for copper/low-
k interconnect fabrication. In the conventional via-first dual damascene process, metal trench …