[HTML][HTML] On large-signal modeling of GaN HEMTs: past, development and future
In the past few decades, circuits based on gallium nitride high electron mobility transistor
(GaN HEMT) have demonstrated exceptional potential in a wide range of high-power and …
(GaN HEMT) have demonstrated exceptional potential in a wide range of high-power and …
Combining Intelligence With Rules for Device Modeling: Approximating the Behavior of AlGaN/GaN HEMTs Using a Hybrid Neural Network and Fuzzy Logic Inference …
This paper uses the Adaptive Neuro-Fuzzy Inference System (ANFIS) to investigate and
propose a new alternative behavioral modeling technique for microwave power transistors …
propose a new alternative behavioral modeling technique for microwave power transistors …
Machine Learning-Based Large-Signal Parameter Extraction for ASM-HEMT
F Chavez, S Khandelwal - IEEE Microwave and Wireless …, 2024 - ieeexplore.ieee.org
A new machine learning (ML)-based large-signal parameter extraction for ASM-HEMT
model has been presented for the first time. The proposed technique uses a 20k training …
model has been presented for the first time. The proposed technique uses a 20k training …
[HTML][HTML] Разработка методов определения параметров физико-топологической модели арсенид-галлиевого транзистора с высокой подвижностью …
ИЮ Ловшенко, ПС Кратович, ПЭ Новиков… - Science and …, 2023 - cyberleninka.ru
В данной работе приведен краткий обзор доступных компактных моделей приборных
структур транзисторов с высокой подвижностью электронов (ТВПЭ) на основе GaAs …
структур транзисторов с высокой подвижностью электронов (ТВПЭ) на основе GaAs …
Enhancing efficiency of PMA standard wireless mobile charging system in automobiles by incorporating state-of-the-art wide bandgap switch
S Mukherjee, D Saha, A Laha… - 2020 IEEE PES/IAS …, 2020 - ieeexplore.ieee.org
We investigate the effect of a novel switching device (Gallium Nitride based Junctionless
FinFET) in lieu of the conventional silicon MOSFET, for the transmitter and receiver sections …
FinFET) in lieu of the conventional silicon MOSFET, for the transmitter and receiver sections …
Physics-Based Analytical Channel Charge Model of InxGa1-xAs/In0.52Al0.48As Quantum-Well Field-Effect Transistors From Subthreshold to Strong Inversion …
HS Jeong, WS Park, HB Jo, IG Lee… - IEEE Journal of the …, 2022 - ieeexplore.ieee.org
This paper presents a physics-based analytical channel charge model for indium-rich In x
Ga 1-x As/In 0.52 Al 0.48 As quantum-well (QW) field-effect transistors (FETs) that is …
Ga 1-x As/In 0.52 Al 0.48 As quantum-well (QW) field-effect transistors (FETs) that is …
[PDF][PDF] An integrated model for solving production planning and production capacity problems using an improved fuzzy model for multiple linear programming …
Decision making has become a part of our everyday lives. The main apprehension is that
almost all decision difficulties include certain criteria, which usually can be multiple or …
almost all decision difficulties include certain criteria, which usually can be multiple or …
A 110-GHz Push-Push Balanced Colpitts Oscillator Using 0.15-μm GaN HEMT Technology
J Wang, YC Chang, Y Liu, SH Li… - 2023 IEEE/MTT-S …, 2023 - ieeexplore.ieee.org
This paper presents a sub-THz oscillator using 0.15-μm GaN HEMT technology. A push-
push balanced Colpitts topology is proposed to achieve a very high operating frequency …
push balanced Colpitts topology is proposed to achieve a very high operating frequency …
Loss Reduction in a Grid-Connected Photovoltaic System Operated with P-&-O Algorithm based MPPT Control by introducing Diamond MOSFET
We predict an 11.5% loss reduction in a grid-connected PV system with Perturb & Observe
(P-&-O) algorithm based Maximum Power Point Tracking (MPPT) control by placing …
(P-&-O) algorithm based Maximum Power Point Tracking (MPPT) control by placing …