Pattern-based write scheduling and read balance-oriented wear-leveling for solid state drivers

J Li, X Xu, X Peng, J Liao - 2019 35th Symposium on Mass …, 2019 - ieeexplore.ieee.org
This paper proposes a pattern-based I/O scheduling mechanism, which identifies frequently
written data with patterns and dispatches them to the same SSD blocks having a small erase …

Hybrid write strategy based on hot data recognition and channel busyness perception for consumer solid state drives

Y Ge, J Bao, X Xu, Q Liu, Y Yao - IEEE Transactions on …, 2023 - ieeexplore.ieee.org
The NAND flash-based solid-state drive (SSD) has been widely used in consumer electronic
products such as digital cameras, smartphones and laptops. In these products, the life and …

Data distribution for heterogeneous storage systems

J Zhou, Y Chen, M Zheng… - IEEE Transactions on …, 2022 - ieeexplore.ieee.org
The exponential growth of data in many science and engineering domains poses significant
challenges to storage systems. Data distribution is a critical component in large-scale …

Access Characteristic Guided Partition for Nand Flash-Based High-Density SSDs

Y Lv, L Shi, Y Song, CJ Xue - IEEE Transactions on Computer …, 2023 - ieeexplore.ieee.org
nand flash-based solid-state drives (SSDs) are a kind of widely adopted storage. However,
state-of-the-art works presented that the SSD always suffers from significant read …

CRRC: Coordinating retention errors, read disturb errors and huffman coding on TLC NAND flash memory

TC Yu, CH Wu, YQ Liao - IEEE Transactions on Dependable …, 2022 - ieeexplore.ieee.org
Nowadays, TLC NAND flash memory has become a mainstream storage medium because
of its large capacity and low cost. However, TLC NAND flash memory could have the …

Access characteristic guided partition for read performance improvement on solid state drives

Y Lv, L Shi, Q Li, CJ Xue… - 2020 57th ACM/IEEE …, 2020 - ieeexplore.ieee.org
Solid state drives (SSDs) are now widely deployed due to the development of high-density
and low-cost NAND flash memories. Previous works have identified that the read …

Data representation aware of damage to extend the lifetime of mlc nand flash memory

B Zhou, T Ye, S Wan, X He, W Xiao… - IEEE Transactions on …, 2022 - ieeexplore.ieee.org
Multilevel cell (MLC) NAND flash memory uses the voltages of the memory cells to represent
bits, but high voltages cause much more damage on the cells than low voltages. Free space …

Valid window: a new metric to measure the reliability of nand flash memory

M Ye, Q Li, J Nie, TW Kuo… - 2020 Design, Automation & …, 2020 - ieeexplore.ieee.org
NAND flash memory has been widely adopted in storage systems today. The most important
issue in flash memory is its reliability, especially for 3D NAND, which suffers from several …

Frequent pattern-based mapping at flash translation layer of solid-state drives

J Li, X Xu, B Huang, J Liao, X Peng - IEEE Access, 2019 - ieeexplore.ieee.org
In order to reduce the overhead of garbage collection, as well as yield an even erasure
distribution of blocks in solid-state drives (SSDs), this paper proposes a mapping approach …

EFM: Elastic Flash Management to Enhance Performance of Hybrid Flash Memory

B Li, B Yuan, D Du - 2021 IEEE 39th International Conference …, 2021 - ieeexplore.ieee.org
NAND-based flash memory has become a prevalent storage media due to its low access
latency and high performance. By setting up different incremental step pulse programming …