The precise role of UV exposure time in controlling the orbital transition energies, optical and electrical parameters of thermally vacuum evaporated Se50Te50 thin film

HI Elsaeedy, A Qasem, M Mahmoud, HA Yakout… - Optical Materials, 2021 - Elsevier
The scenarios for this work have been summarized in the preparation of the Se 50 Te 50 thin
film-(~ 500 nm)-by thermal evaporation method, then using a mercury lamp with a 150 W/cm …

Structure and AC electrical characterization for amorphous Se50Te50 thin-film fabricated by thermal evaporation technique

ZA Alrowaili, A Qasem, ER Shaaban… - Physica B: Condensed …, 2021 - Elsevier
Se 50 Te 50 alloy has been successfully fabricated utilizing the common melt quench
technique. The Se 50 Te 50 film was deposited onto a well-cleaned glass substrate at 298 K …

Exploring dielectric and AC conduction characteristics in elemental selenium glass modified with silver halides

A Kumar, V Saraswat, A Dahshan, HI Elsaeedy… - RSC …, 2024 - pubs.rsc.org
In this research work, we have examined the influence of silver halide doping on the
dielectric dispersion and AC conduction of elemental selenium. The in-depth investigation …

Temperature-dependent electrical properties and impedance response of amorphous Ag x (As40S30Se30)100−x chalcogenide …

KO Čajko, DL Sekulić, S Lukić-Petrović… - Journal of Materials …, 2017 - Springer
Abstract Amorphous Ag x (As 40 S 30 Se 30) 100− x (x= 1, 2, 3, 4 and 5 at.%) chalcogenide
glassy alloys were prepared by a melt-quenching technique. DC conductivity data measured …

[HTML][HTML] Investigation of Crystallization Kinetics in Glassy Se and Binary Se98M2 (M=Ag, Cd, Zn) Alloys Using DSC Technique in Non-Isothermal Mode

C Dohare, N Mehta - 2012 - scirp.org
The crystallization kinetics of glassy Se and binary Se98M2 (M= Ag, Cd, Zn) alloys have
been studied at different heating rates (5, 10, 15, 20 Kmin-1) using Differential Scanning …

On the dielectric study and AC conductivity measurements of quaternary Se-Te-Ge-Pb nano-chalcogenide alloys

N Sharma, BS Patial, N Thakur - Journal of Electronic Materials, 2019 - Springer
In the present study, quaternary (Se 80 Te 20) 94− x Ge 6 Pb x (x= 0, 2, 4 and 6) glassy
alloys were prepared using melt-quench technique. Investigation of dielectric properties, ie …

Thermal stability and crystallization kinetic of Se-Te-Ag glassy alloys and thick films for electronic devices.

KI Hussain, A Ashour, ES Yousef… - Chalcogenide …, 2024 - search.ebscohost.com
The present work has examined the thermal features of glassy chacogenide materials Se0.
75-xTe0. 25Agx (x= 0, 2, 4, 6, 8, 10 at%). The thermal stability of these compositions has …

Signature Of stiffness transition in electrical behaviour of Se-Te-Sn-Ge glassy alloys

SK Pal, N Mehta, A Dahshan - Philosophical Magazine, 2021 - Taylor & Francis
In the family of amorphous semiconductors, non-oxide chalcogenide glasses (ChGs) are in
the spotlight because of their widespread applications in various scientific and industrial …

[PDF][PDF] Dielectric dispersion in Te9Se72Ge19-xSbx (x= 8, 9, 10, 11, 12) chalcogenide glassy alloy

AV Nidhi, V Modgil, VS Rangra - Chalcogenide Letters, 2016 - chalcogen.ro
In diverse field of amorphous semiconductors, non-oxide glasses are in focus due to their
extensive applications in technological fields. These glasses have low value of dielectric …

Dobijanje i karakterizacija 2D i 3D funkcionalnih materijala iz klase halkogenida dopiranih srebrom

K Čajko - 2018 - search.proquest.com
Predmet istraživanja ove doktorske disertacije su bila halkogenidna stakla iz sistema Ag x
(As 40 S 30 Se 30) 100–x (x= 0, 0.5, 1, 2, 3, 4, 5, 10, 12, 13, 15 at.% Ag)–3D forma i tanki …