This paper investigates symmetrical design of a Junctionless Nanowire Tunnel-Field-Effect-
Transistor (JL-NWTFET) for highly sensitive biosensor. JL-NWTFET deployed using Gate-All …

In this Article, the effects of lateral straggle parameter variation and Temperature variation
have been investigated on Hetero Junction Dual Gate Vertical TFET. Although the TFET is a …

Abstract The Double Gate-All-Around (DGAA) MOSFET and GAA NWFET are compared and
analyzed from both electrical and thermal perspectives under four different conditions by …

In this paper, we report, the hot carrier reliability issue in the Si 1-x Ge x source/drain
nanotube (NT) junctionless field-effect transistor (JLFET) with temperature variations. The …

This article proposes investigation of low power performance of a fin field-effect transistor
(FinFET) with surrounding gates through a calibrated technology computer-aided design …

In this article, we examined the influence of temperature in P+ pocket silicon carbide (SiC)
gate all around junctionless field effect transistor (GAA JLFET). The inclusion of P+ pocket …

In this article, a mathematical model is presented for the drain current and electric field of
silicon carbide gate all around junctionless field effect transistors (SiC GAA JLFETs). The …

The subthreshold swing (SS) model is presented for a junctionless cylindrical surrounding
gate (JLCSG) metal oxide semiconductor field effect transistor (MOSFET) with a Gaussian …

In this article, we proposed a core-shell (CS) architecture that uses the silicon carbide (SiC)
as a nanowire for higher breakdown voltages in a Junctionless field effect transistor (JLFET) …