Origin of frequency and voltage dependent negative dielectric properties in the Al/p-Si Schottky diodes with (Cd0. 3Zn0. 7O) interfacial layer in the wide range of …
The real and imaginary parts of complex-dielectric (ε′, ε'') and electric-modulus (M′, M ″),
dielectric loss tangent (tanδ), and conductivity (σ) values of Al/(Cd 0.3 Zn 0.7 O)/p-Si …
dielectric loss tangent (tanδ), and conductivity (σ) values of Al/(Cd 0.3 Zn 0.7 O)/p-Si …
[PDF][PDF] The Investigation of Negative Capacitance and Electrical Characteristics in the Forward Bias Capacitance-Voltage in Au/P3ht/N-Si (Mps) Schottky Barrier …
The capacitance/conductance-voltage-temperature (CVT) and (G/ω-VT) characteristics of
Au/P3HT (poly3-hexylthiophene)/n-Si (MPS) Schottky barrier diode (SBD) have been …
Au/P3HT (poly3-hexylthiophene)/n-Si (MPS) Schottky barrier diode (SBD) have been …