This Review highlights basic and transition metal conducting and semiconducting oxides.
We discuss their material and electronic properties with an emphasis on the crystal …

Processing at the atomic scale is becoming increasingly critical for state-of-the-art electronic
devices for computing and data storage, but also for emerging technologies such as related …

Since the first report of amorphous In–Ga–Zn–O based thin film transistors, interest in oxide
semiconductors has grown. They offer high mobility, low off-current, low process …

Amorphous oxide semiconductor transistors have been a mature technology in display
panels for upward of a decade, and have recently been considered as promising back‐end …

Conductive and semiconductive oxides constitute a class of materials of which the electrical
conductivity and optical transparency can be modulated through material design (eg, doping …

Indium oxide thin films are deposited via plasma-enhanced atomic layer deposition (PEALD)
to exploit their potential as a semiconductor in high mobility thin-film transistors (TFTs) …

Electrode materials play a decisive role in almost all electrochemical energy storage
devices, determining their overall performance. Proper selection, design and fabrication of …

Indium oxide (InO x) thin films have attractive carrier transport properties for oxide
semiconductors because of the large isotropic 5 s orbital overlap. In this study, InO x films …

We investigated the atomic layer deposition (ALD) of indium oxide (In2O3) thin films using
alternating exposures of trimethylindium (TMIn) and a variety of oxygen sources: ozone (O3) …

Low-temperature growth of In2O3 films was demonstrated at 70–250° C by plasma-
enhanced atomic layer deposition (PEALD) using a newly synthesized liquid indium …