Thermally Driven Multilevel Non-Volatile Memory with Monolayer MoS2 for Brain-Inspired Artificial Learning
The demands of modern electronic components require advanced computing platforms for
efficient information processing to realize in-memory operations with a high density of data …
efficient information processing to realize in-memory operations with a high density of data …
First demonstration of 2T0C-FeDRAM: a-ITZO FET and double gate a-ITZO/a-IGZO FeFET with a record-long multibit retention time of> 4-bit and> 2000 s
TH Noh, S Chen, HB Kim, T Jin, SM Park, SU An, X Sun… - Nanoscale, 2024 - pubs.rsc.org
Conventional DRAM, consisting of one transistor and one capacitor (1T1C), requires
periodic data refresh processes due to its limited retention time and data-destructive read …
periodic data refresh processes due to its limited retention time and data-destructive read …
Leaky 2T Dynamic Random-Access Memory Devices Based on Nanometer-Thick Indium–Gallium− Zinc-Oxide Films for Reservoir Computing
This paper explores the integration of indium–gallium–zinc oxide (IGZO)-based 2-transistor
0-capacitor dynamic random-access memory (2T0C DRAM, or shortly, 2T DRAM) into …
0-capacitor dynamic random-access memory (2T0C DRAM, or shortly, 2T DRAM) into …
Development of large scale CVD grown two dimensional materials for field-effect transistors, thermally-driven neuromorphic memory, and spintronics applications
SK Mallik - arXiv preprint arXiv:2409.07357, 2024 - arxiv.org
Semiconductor research has shifted towards exploring two-dimensional (2D) materials as
candidates for next-generation electronic devices due to the limitations of existing silicon …
candidates for next-generation electronic devices due to the limitations of existing silicon …
Highly Linear and Symmetric 2T Synaptic Device Composed of IGZO Transistors by Identical Charging and Discharging Characteristics
S Seong, S Park, H Cho… - 2023 7th IEEE Electron …, 2023 - ieeexplore.ieee.org
We propose a 2T synaptic device based on indium gallium zinc oxide (IGZO) transistors that
linearly and symmetrically updates synaptic weights. The constant charging/discharging …
linearly and symmetrically updates synaptic weights. The constant charging/discharging …
An Analog Neuromorphic On-Chip Training System with IGZO TFT-Based 6T1C 367-State Synaptic Memory Achieving 0.99-R2 Linearity and 104-Times Enhanced …
Emerging synaptic devices are promising for optimizing deep neural network (DNN)
accelerators. Training process demands higher-bit weights and inputs, requiring more …
accelerators. Training process demands higher-bit weights and inputs, requiring more …
IGZO Photonic-Synaptic Transistors with Outstanding Linearity by Controlling Oxygen Vacancy for Neuromorphic Computing
T Seo, J Yun, Y Chung - 2023 7th IEEE Electron Devices …, 2023 - ieeexplore.ieee.org
A significantly high linearity was achieved by controlling oxygen vacancy in IGZO photonic-
synaptic device. A substrate bias during sputtering process and subsequent nitrogen plasma …
synaptic device. A substrate bias during sputtering process and subsequent nitrogen plasma …