High electron mobility transistor: physics-based TCAD simulation and performance analysis
Abstract High Electron Mobility Transistor (HEMT) attained great interest because of its
superior electron transport making it suitable for applications in high-speed circuits and high …
superior electron transport making it suitable for applications in high-speed circuits and high …
Characterization and analysis of low-noise GaN-HEMT based inverter circuits
In this work, the authors have propounded a novel Gallium Nitride High Electron Mobility
Transistor (GaN-HEMT) structure and have analyzed its DC, RF and noise performance …
Transistor (GaN-HEMT) structure and have analyzed its DC, RF and noise performance …
Study on Sensitivity Parameters of Staggered Heterojunction Gate Stack Tunnel FET Biosensor
In this study, we suggest a label-free, low-power biosensor based on a staggered
heterojunction gate stack tunnel field-effect transistor (SHGS TFET). A SHGS TFET-based …
heterojunction gate stack tunnel field-effect transistor (SHGS TFET). A SHGS TFET-based …
AlGaN/GaN HEMT AC/DC Performance Analysis of Conventional and Gate Recessed MOS-HEMT With Temperature Variation
AlGaN/AIN/GaN based conventional and recessed gate high electron mobility transistors
(HEMTs) having Al 2 O 3 gate oxide have been investigated for comprehensive …
(HEMTs) having Al 2 O 3 gate oxide have been investigated for comprehensive …
Introduction to III–V Materials and HEMT Structure
S Manna - Advanced Indium Arsenide-Based HEMT Architectures …, 2021 - taylorfrancis.com
This chapter is focused on introducing III–V semiconductor materials, their properties, and
applications. The heterojunction concepts, discontinuity in bands, and the two-dimensional …
applications. The heterojunction concepts, discontinuity in bands, and the two-dimensional …
Advanced Indium Arsenide-based HEMT Architectures for Terahertz Applications
A HEMT - api.taylorfrancis.com
In this era of high-speed communication, the semiconductor industry is focused on
fabricating high-speed devices with reduced short-channel effects and minimal power …
fabricating high-speed devices with reduced short-channel effects and minimal power …