The accelerated evolution of artificial intelligence (AI) and semiconductor technologies has
fostered a mutually reinforcing relationship, whereby each technology has contributed to the …

Indium oxide (In2O3) is a transparent wide-bandgap semiconductor suitable for use in the
back-end-of-line-compatible channel layers of heterogeneous monolithic three-dimensional …

Oxide semiconductors have gained significant attention in electronic device industry due to
their high potential for emerging thin-film transistor (TFT) applications. However, electrical …

The persistent photocurrent (PPC) and high carrier concentration are challenging the
ultraviolet photodetection behaviors of amorphous InGaO films. Herein, InGaO/PbI2 …

Organic electronics hold immense promise due to their flexibility, low-cost processing, and
diverse applications. Despite tremendous progress, low-voltage operation has remained a …

Drain-induced barrier lowering (DIBL) is one of the most critical obstacles degrading the
reliability of integrated circuits based on miniaturized transistors. Here, the effect of a …

In this letter, amorphous indium-gallium-zinc-tin oxide (-IGZTO) thin-film transistors (TFTs)
were characterized with a bottom gate structure, where a single target with three cation …

In this paper, high-performance indium gallium oxide (IGO) thin-film transistor (TFT) with a
double-gate (DG) structure was developed using an atomic layer deposition route. The …

Oxide semiconductors (OS) are attractive materials for memory and logic device applications
owing to their low off-current, high field effect mobility, and superior large-area uniformity …

Deposition of indium oxide base films for high‐mobility thin film transistors (TFTs) has been
an important part in the implementation of high‐resolution and high‐frequency display back …