Abstract Cryogenic Atomic Layer Etching (cryo-ALE) of SiO2 based on alternating a C4F8
molecule physisorption step and an argon plasma step, has been enhanced thanks to a …

As the process complexity has been increased to overcome challenges in plasma etching,
individual control of internal plasma parameters for process optimization has attracted …

In this work, atomic layer etching (ALE) of Si compounds using H2 or N2 plasma
modification followed by fluorine radical exposure is discussed. It is shown that the H2 …

SiO 2 atomic layer etching (ALE) techniques are widely used to improve the etch issues
related to nanoscale semiconductor device etching such as self-aligned contact (SAC) …

Advanced logic, interconnect, contact, and memory at 5 nm and 3 nm put nearly impossible
process requirements on material removal and addition processes. So-called atomic …

In this short review, the evolution of plasma etching technologies used in microelectronics
fabrication since the discovery of the reactive ion etching process 50 years ago is explored …

Microelectronics are present in almost all of the devices we use. Transistor and packaging
miniaturization over the last several decades have resulted in highly complex fabrication …

Stringent processing windows are required for the fabrication of sub-7-nm semiconductor
devices, which in turn place severe constraints on conventional plasma-assisted etching …

Etch processes have always involved inherent process trade-offs related to fundamental
plasma parameters to achieve planar patterning metrics related to damage, aspect ratio …

Self-aligned contact (SAC) etch has been known to be challenging due to its limited process
margin on Si 3 N 4 to SiO 2 etch selectivity. Understanding of surface modification during …