The ever‐increasing power density and operation frequency in electrical power conversion
systems require the development of power devices that can outperform conventional Si …

Group-III-nitride semiconductors, including AlN, GaN, InN and their ternary, quaternary
compounds, are promising electronic and optoelectronic materials for the applications in …

GaN-based photodetectors are strongly desirable in many advanced fields, such as space
communication, environmental monitoring, etc. However, the slow photo-response speed in …

The growth of single‐crystal III‐nitride films with a low stress and dislocation density is
crucial for the semiconductor industry. In particular, AlN‐derived deep‐ultraviolet light …

Wide band-gap gallium nitride (GaN) device has the advantages of large band-gap, high
electron mobility and low dielectric constant. Compared with traditional Si devices, these …

The effect of substrate-induced strain in polycrystalline ZnO thin films on different substrate,
eg, GaN epilayer, sapphire (0001), quartz glass, Si (111)∕ SiO 2, and glass deposited by …

GaN HEMT has attracted a lot of attention in recent years owing to its wide applications from
the high-frequency power amplifier to the high voltage devices used in power electronic …

Epitaxy growth and mechanical transfer of high‐quality III‐nitrides using 2D materials,
weakly bonded by van der Waals force, becomes an important technology for semiconductor …

(Al) GaN recess-free normally OFF technology is developed for fabrication of high-yield
lateral GaN-based power devices. The recess-free process is achieved by an ultrathin …

Most III-nitride semiconductors are grown on non-lattice-matched substrates like sapphire or
silicon due to the extreme difficulty of obtaining a native GaN substrate. We show that …