Metal–insulator–metal diodes: A potential high frequency rectifier for rectenna application

S Shriwastava, CC Tripathi - Journal of Electronic Materials, 2019 - Springer
Abstract Metal–insulator–metal (MIM) diodes are among the most promising candidates for
applications in the high frequency regime. Owing to the tunneling dominant current …

Quantum‐Tunneling Metal‐Insulator‐Metal Diodes Made by Rapid Atmospheric Pressure Chemical Vapor Deposition

AH Alshehri, K Mistry, VH Nguyen… - Advanced Functional …, 2019 - Wiley Online Library
A quantum‐tunneling metal‐insulator‐metal (MIM) diode is fabricated by atmospheric
pressure chemical vapor deposition (AP‐CVD) for the first time. This scalable method is …

Adsorption of Cr (VI) by lanthanum oxide-loaded porous mullite–corundum ceramics

X Zhou, S Zhu, G Fei, Y Ma - Functional Materials Letters, 2022 - World Scientific
In this study, a novel lanthanum oxide-loaded porous mullite–corundum ceramic was
prepared and adopted to remove Cr (VI) from aqueous solution. The lanthanum oxide …

Improving Dielectric Thin Films for Metal Insulator Metal Diodes and Perovskite Solar Cells

AHQ Alshehri - 2021 - uwspace.uwaterloo.ca
Metal-insulator-metal (MIM) diodes are nano-electronic devices that operate by quantum
tunneling of electrons through a thin dielectric layer to rectify high frequency alternating …

ULTRA-HIGH SENSITIVITY VANADIUM–VANADIUM SESQUIOXIDE–VANADIUM (V–V2O3–V) SYMMETRIC TUNNEL JUNCTION DIODE

M Abdel-Rahman - Surface Review and Letters, 2019 - World Scientific
In this paper, a symmetrical MIM tunnel junction diode with a novel material combination,
vanadium–vanadium sequioxide–vanadium (V–V2O3–V) is fabricated and electrically …