Silicon-germanium is an important material that is used for the fabrication of SiGe
heterojunction bipolar transistors and strained Si metal-oxide-semiconductor (MOS) …

Using a reduced pressure-chemical vapor deposition cluster tool, we have studied the
growth kinetics of Si and SiGe and the n-type and p-type doping of Si with both silane and …

Polycrystalline SiGe etches that are selective to silicon dioxide as well as silicon are needed
for flexibility in device fabrication. A solution of NH 4 OH, H 2 O 2, and H 2 O has been found …

Gas-phase reaction pathways for GeH4 decomposition are proposed and the relevant
reaction rates are evaluated by transition-state theory with molecular structures and …

The stability of C54 Ti (Si,-, Ge,,), films in contact with Si,-XGe, substrates was investigated.
The C54 Ti (Si,-, Ge,, j, films were formed from the Ti-Sii-, Ge, solid phase metallization …

Silicon-germanium is an important material that is used for the fabrication of SiGe
heterojunction bipolar transistors and strained Si metal-oxide-semiconductor (MOS) …

Sil_~ Ge~ films deposited by very low pressure chemical vapor deposition (VLPCVD), with
and without plasma enhancement, and by low-pressure CVD (LPCVD) were studied to …

A simple model for the Ge composition in Si 1− x Ge x films grown from SiH 2 Cl 2/GeH 4
precursors is developed on the basis of adsorption and desorption kinetics for the …

We have studied in reduced pressure chemical vapor deposition the selective epitaxial
growth (SEG) of Si and SiGe using a dichlorosilane+ germane+ hydrochloric acid chemistry …

We have used density functional theory along with the cluster approximation to investigate
the adsorption of chlorinated silanes on the Si (100)-2× 1 surface. We have calculated the …