Investigation of Traps Impact on PAE and Linearity of AlGaN/GaN HEMTs Relying on a Combined TCAD–Compact Model Approach
This article proposes a novel modeling approach for the analysis of the microwave power
performance of GaN HEMTs. By combining Technology Computer-Aided Design (TCAD) …
performance of GaN HEMTs. By combining Technology Computer-Aided Design (TCAD) …
Improved breakdown performance in recessed-gate normally off GaN MIS-HEMTs by regrown fishbone trench
This work develops a regrown fishbone trench (RFT) structure in selective area growth
(SAG) technique to fabricate recessed-gate normally off GaN metal–insulator …
(SAG) technique to fabricate recessed-gate normally off GaN metal–insulator …
p-GaN Platform for Next-Generation GaNComplementary Transistors and Circuits
Q Xie - 2024 - dspace.mit.edu
Gallium nitride (GaN) integrated circuits (ICs) are receiving increasing attention because
they offer compactness, reduced parasitics, and higher performance compared to discrete …
they offer compactness, reduced parasitics, and higher performance compared to discrete …
Exploring the Potential of GaN-Based Power HEMTs with Coherent Channel
The GaN industry always demands further improvement in the power transport capability of
GaN-based high-energy mobility transistors (HEMT). This paper presents a novel …
GaN-based high-energy mobility transistors (HEMT). This paper presents a novel …
Fermi-Level Pinning Effect in Gate Region: A Case Study of Multimetal Gated AlGaN/GaN HEMT for High RF Linearity
This work investigates the robustness of AlGaN/GaN multimetal gated (MMG) HEMT
architecture for third-order transconductance (g m3) optimization and linearity improvement …
architecture for third-order transconductance (g m3) optimization and linearity improvement …
Revolutionizing Fe doped back barrier AlGaN/GaN HEMTs: Unveiling the remarkable 1700V breakdown voltage milestone
This research investigates the enhanced device breakdown capabilities of silicon-based
AlGaN/GaN High Electron Mobility Transistors (HEMT). By incorporating various back barrier …
AlGaN/GaN High Electron Mobility Transistors (HEMT). By incorporating various back barrier …
Measurement and Modeling of GaN HEMTs Operating at 500° C
H Xue, C Storey, JP Noël… - 2024 IEEE Canadian …, 2024 - ieeexplore.ieee.org
Device characterization and modeling, including RF performance, of AlGaN/GaN high-
electron-mobility transistors (HEMTs) from 22° C to 500° C are presented in this paper. The …
electron-mobility transistors (HEMTs) from 22° C to 500° C are presented in this paper. The …
HEMT As a Potential Contender For 5th Generation Communication Technology
YK Verma, SKH Bindhu - 2024 International Conference on …, 2024 - ieeexplore.ieee.org
The high electron mobility transistor (HEMT) inherits high electron mobility as well as wider
energy bandgap and is a suitable candidate for high-frequency operation. These interesting …
energy bandgap and is a suitable candidate for high-frequency operation. These interesting …