GaAs/AlAs coupled multilayer cavity structures for terahertz emission devices
T Kitada, F Tanaka, T Takahashi, K Morita… - Applied Physics …, 2009 - pubs.aip.org
GaAs/AlAs coupled multilayer cavity structures are proposed as terahertz emission devices.
Two cavity modes with an optical frequency difference in the terahertz region can be …
Two cavity modes with an optical frequency difference in the terahertz region can be …
Difference mode generation in injection lasers
VY Aleshkin, AA Afonenko, NB Zvonkov - Semiconductors, 2001 - Springer
The nonlinear generation of a difference mode in an injection laser is considered. A new
design based on the InGaP/GaAs/InGaAs heterostructure is suggested in order to generate …
design based on the InGaP/GaAs/InGaAs heterostructure is suggested in order to generate …
Strong sum frequency generation in a GaAs/AlAs coupled multilayer cavity grown on a (113) B-oriented GaAs substrate
F Tanaka, T Takahashi, K Morita… - Japanese journal of …, 2010 - iopscience.iop.org
A strong sum frequency generation (SFG) has been demonstrated using two cavity modes
realized in a GaAs/AlAs coupled multilayer cavity structure in which two GaAs half …
realized in a GaAs/AlAs coupled multilayer cavity structure in which two GaAs half …
Instability mechanisms for the hydrogenated amorphous silicon thin‐film transistors with negative and positive bias stresses on the gate electrodes
YH Tai, JW Tsai, HC Cheng, FC Su - Applied physics letters, 1995 - pubs.aip.org
The hydrogenated amorphous silicon (a‐Si: H) thin film transistors (TFTs) with silicon nitride
as a gate insulator have been stressed with negative and positive bias to realize the …
as a gate insulator have been stressed with negative and positive bias to realize the …
Optical anisotropy of strongly enhanced sum frequency generation in (113) B GaAs/AlAs coupled multilayer cavity
K Morita, F Tanaka, T Takahashi, T Kitada… - Applied physics …, 2010 - iopscience.iop.org
We have investigated optical anisotropy of sum frequency generation (SFG) of two cavity
modes realized in a (113) B GaAs/AlAs coupled multilayer cavity. The SFG signals were …
modes realized in a (113) B GaAs/AlAs coupled multilayer cavity. The SFG signals were …
Current trends in amorphous magnetism
Recent research on some topics in amorphous magnetism is reviewed and questions are
posed which should be answered by future work. The topics are i) appearance of magnetism …
posed which should be answered by future work. The topics are i) appearance of magnetism …
[PDF][PDF] Генерация разностной моды в полупроводниковых лазерах
ВЯ Алешкин, АА Афоненко… - Физика и техника …, 2001 - journals.ioffe.ru
Рассмотрена нелинейная генерация разностной гармоники в инжекционном
полупроводниковом лазере. Предложена конструкция лазера на основе …
полупроводниковом лазере. Предложена конструкция лазера на основе …
Terahertz waveforms generated by second-order nonlinear polarization in GaAs/AlAs coupled multilayer cavities using ultrashort laser pulses
T Kitada, S Katoh, T Takimoto… - IEEE Photonics …, 2013 - ieeexplore.ieee.org
Temporal terahertz waveforms generated from GaAs/AlAs coupled multilayer cavity
structures were simulated and compared with experimental results. Femtosecond laser …
structures were simulated and compared with experimental results. Femtosecond laser …
Two-color surface-emitting lasers using a semiconductor coupled multilayer cavity
Two-color surface-emitting lasers were demonstrated, employing a GaAs/AlGaAs coupled
multilayer cavity composed of two cavity layers and three distributed Bragg reflector (DBR) …
multilayer cavity composed of two cavity layers and three distributed Bragg reflector (DBR) …
Current-injection two-color lasing in a wafer-bonded coupled multilayer cavity with InGaAs multiple quantum wells
Current-injection two-color lasing has been demonstrated using a GaAs/AlGaAs coupled
multilayer cavity that is a good candidate for novel terahertz-emitting devices based on …
multilayer cavity that is a good candidate for novel terahertz-emitting devices based on …