Atomic layer deposition (ALD) has become an indispensable thin-film technology in the
contemporary microelectronics industry. The unique self-limited layer-by-layer growth …

The 2022 Roadmap is the next update in the series of Plasma Roadmaps published by
Journal of Physics D with the intent to identify important outstanding challenges in the field of …

Indium nitride (InN) is a low-band-gap semiconductor with unusually high electron mobility,
making it suitable for IR-range optoelectronics and high-frequency transistors. However, the …

Development at the nanoscale has established diverse and complex structures with the help
of a growing selection of materials to choose from. Among the major developments that has …

As the scale‐down and power‐saving of silicon‐based channel materials approach the limit,
oxide semiconductors are being actively researched for applications in 3D back‐end‐of‐line …

This article discusses key elementary surface-reaction processes in state-of-the-art plasma
etching and deposition relevant to nanoelectronic device fabrication and presents a concise …

III–V compound semiconductors offer optoelectronic properties that are well suited for the
conversion of solar energy to chemical fuels. While such materials suffer from poor stability …

Two-dimensional MoS2 is a promising material for applications, including electronics and
electrocatalysis. However, scalable methods capable of depositing MoS2 at low …

Area-selective atomic layer deposition (ALD) is of interest for applications in self-aligned
processing of nanoelectronics. Selective deposition is generally enabled by …

The scientific study of plasma discharges and their material interactions has been crucial to
the development of semiconductor process engineering and, by extension, the entire …