A detailed review of sub‐5 nm 2D semiconductor monolayer (ML) field‐effect transistors
(FETs) is presented. A brief introduction to the fundamentals of 2D materials and their …

The state-of-the-art first-principles quantum transport theory and modeling are based on
carrying out self-consistent atomistic calculations within the Keldysh nonequilibrium Green's …

Molybdenum disulfide (MoS2) has distinctive electronic and mechanical properties which
make it a highly prospective material for use as a channel in upcoming nanoelectronic …

Since proposed in the 70s, the Non-Equilibrium Green Function (NEGF) method has been
recognized as a standard approach to quantum transport simulations. Although it achieves …

Two-dimensional materials promise excellent gate control and high drive currents at the
ultimate scaling limit. However, numerous challenges must be overcome before silicon can …

Tunneling field-effect transistors (TFETs) based on 2D materials have emerged as promising
candidates for low-power devices. However, many TFETs utilizing 2D materials suffer from …

The foundry industry and academia dedicated to advancing logic transistors are
encountering significant challenges in extending Moore's Law. In the industry, silicon (Si) …

Molybdenum disulfide (MoS2) has distinctive electronic and mechanical properties which
make it a highly prospective material for use as a channel in upcoming nanoelectronic …