We study the processes of dynamical diffraction of the plane X-ray waves on the graphene
film/SiC substrate system in the case of the Bragg diffraction geometry. The statistical …

The characteristics of a damaged layer of p-Cd x Hg 1− x Te/CdZnTe (x∼ 0.223)
heterostructures after implantation by 100-keV silver ions with the implantation dose Q= 3.0× …

Ultra-shallow junctions were formed by low-energy As ion implantation followed by furnace
annealing. It was found that a significant amount of oxygen is redistributed from the silicon …

The quantitative diagnostics of complex defect structures in silicon crystals grown by the
Czochralski method and irradiated with different doses of high-energy electrons (18 MeV) is …

The quantitative characterization of complex microdefect structures in silicon crystals grown
by Czochralski method and irradiated with various doses of high‐energy electrons (18 MeV) …

The generalized statistical dynamical theory of x-ray scattering by imperfect single crystals
with randomly distributed Coulomb-type defects has been extended to characterize structure …

The fundamentals of a new-generation crystallography developed by the authors, known as
diffuse-dynamical multiparametric diffractometry (DDMD), are reviewed. Kovalchuk and …

A comparative study of the defect formation and changes in the lifetime of nonequilibrium
minority charge carriers in silicon while gettering the iron impurity with the use of a combined …

Numerical simulation of the reciprocal space maps measured from the ion-implanted single-
crystal yttrium-iron garnet films on gadolinium-gallium garnet substrate has been carried out …

Созданная в работах [1-8] диффузно-динамическая многопараметрическая
дифрактометрия (ДДМД) коренным образом расширяет возможности …