Negative differential resistance (NDR) has been observed in IV characteristics measured
between two aluminum (Al) pads deposited on a layer containing Silicon nanostructures …

Silicon nanostructures have been prepared on Si wafer using electrochemical etching
process. The transformation of aluminum/nanostructured Si junction from Schottky to Ohmic …

Photo-enhanced hysteretic I–V curves have been observed under reverse bias in a pin
structure containing electrochemically etched nanostructured silicon (Si) sandwiched …

Random arrays of oxide‐passivated silicon nanorods have been obtained by natural
oxidation of electrochemically etched porous silicon in air. The charge transport through …

A pin heterostructure containing electrochemically synthesized silicon (Si) nanorods
embedded in a nonstoichiometric silicon oxide matrix sandwiched as i-layer between p-Si …

Current controlled switching has been observed in p-type crystalline Silicon (pc-Si)/porous
Si (PS)/n-type hydrogenated amorphous Silicon (na-Si: H) heterostructure. Mechanism of …

A systematic study was done to fabricate Macro porous silicon films by electrochemical
etching of p--type silicon with a resistivity range of 0.1–5.0 Ω cm for 60 min in an electrolyte …

An all Si, pin device, consisting of a nanostructured porous Si layer sandwiched between a p-
type crystalline Si and an n-type amorphous Si, exhibits current controlled switching …

We report a technique for non-destructive and in-situ estimation of porosity of nanostructured
porous silicon (PS) by measuring voltage across the electrodes of the electrochemical …

Estimation of electron trap energy (Et), with respect to bulk Si valence band, of oxidized
porous silicon (PS) nanostructures is reported. Photoluminescence (PL) spectra of oxidized …