Improvements in optoelectrical properties of GaAsN are demonstrated by chemical beam
epitaxy (CBE) growth on high-step-density GaAs substrates. The step density at the growing …

This study focuses on the relationship among defects, annealing temperatures, and solar
cell properties in the molecular beam epitaxy-grown GaInNAsSb solar cells. Samples with …

Bi was investigated as a possible surfactant for growth of GaAs1− xNx layers on (100) GaAs
substrates by molecular beam epitaxy (MBE) using a radio frequency (RF) plasma nitrogen …

Decreasing the growth rate in chemical beam epitaxy (CBE) is effective to improve the hole
mobility and minority-carrier lifetime in p-GaAsN films. The hole mobility increased from 120 …

In this paper, the Chemical Beam Epitaxy approach to GaAsN material growth has been
investigated. Photoluminescence and Hall effect measurements were performed to clarify …

The local vibration modes of N–H related defects in GaAsN are studied using isotopes.
When GaAsN is grown through chemical beam epitaxy (CBE) using triethylgallium/tris …

Deep-level defects were investigated and compared among three molecular beam epitaxy
(MBE)-grown dilute nitride semiconductor GaInNAsSb solar cells, one of which was as …

The effects of nitrogen (N) distribution on the electrical properties of GaAsN films were
evaluated by intentionally changing the N distribution using atomic layer epitaxy (ALE) and …

We have demonstrated that Mg is a controllable acceptor element for p-type GaAsN alloys
grown by solid-source molecular-beam epitaxy (MBE), where a hole concentration has been …

The N–H related defects at 3124 cm-1 are found to be acceptors in GaAsN grown by
chemical beam epitaxy (CBE), by comparing the concentrations of N–H defects with those of …