Ga2O3 has emerged as a promising ultrawide bandgap semiconductor for numerous device
applications owing to its excellent material properties. In this paper, we present a …

Currently, a significant portion (~ 50%) of global warming emissions, such as CO2, are
related to energy production and transportation. As most energy usage will be electrical (as …

The present Tutorial provides a description of the growth of bulk β-Ga 2 O 3 single crystals
by the Czochralski method with a focus on the critical growth aspects. In particular, it details …

Here we demonstrate a dramatic improvement in Ti/Au ohmic contact performance by
utilizing the anisotropic nature of β-Ga2O3. Under a similar doping concentration, Ti/Au …

Two inch diameter, highly conducting (Si-doped) bulk β-Ga 2 O 3 single crystals with the
cylinder length up to one inch were grown by the Czochralski method. The obtained crystals …

A high growth rate process above 1 µm/h was achieved for Si-doped (100) β-Ga 2 O 3
homoepitaxial films grown via metalorganic vapor phase epitaxy (MOVPE) while …

Ultraviolet‐C (UVC) radiation is employed in various applications, including irreplaceable
applications in military and civil fields, such as missile guidance, flame detection, partial …

Abstract The cylindrical Sn: β-Ga 2 O 3 crystal with high crystalline quality was successfully
designed and grown by the innovative edge-defined film-fed growth (EFG) method equipped …

Ultra-thin films of low damping ferromagnetic insulators with perpendicular magnetic
anisotropy have been identified as critical to advancing spin-based electronics by …

This work investigated the metalorganic vapor-phase epitaxy (MOVPE) of (100) β-Ga 2 O 3
films with the aim of meeting the requirements to act as drift layers for high-power electronic …