AlGaN/GaN High Electron Mobility Transistors (HEMTs) require a semi‐insulating buffer to
compensate a high background donor concentration and to prevent parasitic effects, such as …

We have performed the first‐principles calculations on the structural, electronic, and
magnetic properties of 3d transition‐metal™(Cr, Mn, Fe, Co, and Ni) atoms doped 2D GaN …

First-principles calculations have been carried out to investigate the optoelectronic and
magnetic of Ga 1-x V x N (x​=​ 0, 0.027, 0.0625 and 0.125). Our results demonstrate that V …

Abstract Scandium (Sc) doped GaN layers (GaN: Sc) were grown on SiN treated sapphire
substrate by atmospheric pressure metal–organic vapor phase epitaxy (AP-MOVPE) using …

Using the first-principles method based on the density functional theory, we have studied
magnetic and optical properties of V-doped GaN. For 12.5% V-doped GaN, total energy …

We have carried out first-principles spin-polarized calculations in order to study the
energetics and electronic structure of vanadium adsorption and incorporation on GaN …

Using the first-principles method based on the density functional theory, we study electronic
and magnetic properties of GaN doped with 6.25% of V. The V dopants are found spin …

We carried out first-principles spin-polarized calculations in order to study the adsorption
and diffusion of 3d transition metal (TM= Ti, V, Cr, Mn, Fe, Co, and Ni) atoms on a GaN …

Using first-principles calculations, by means of The Full-Potential Linearized Augmented
Plane Wave (FP-LAPW) method with the Gradient Generalized Approximation (GGA), we …

This work reports the photoluminescence (PL) study of vanadium-doped GaN (GaN: V) in
the 9–300K range. Samples have been successfully prepared on sapphire substrates by …