Power switching devices based on wide bandgap semiconductor materials, such as silicon
carbide (SiC) and gallium nitride (GaN) offer superior performance such as low switching …

The increasing demand for higher power densities and higher efficiencies in power
electronics, driven by the aerospace, electric vehicle, and renewable energy industries …

In this paper, a comparative performance evaluation of a 1.2 kV SiC MOSFET module and a
1.2 kV Si IGBT module is carried out under a series of different conditions such as similar …

This paper investigates the switching performance of a 1.2 kV half-bridge SiC MOSFET
module from Sanrex. Unlike in a standard SiC MOSFET module, where the MOSFET and the …

In this paper, the impact of using parallel SiC MOSFETs as the switching device is
investigated. Measurement considerations for a double pulse test are discussed, and the …

This paper presents the evolution of electrical performance between the first and the second
generation of SiC MOSFET for high temperature applications. A complete process to …

The switching performance of a six-pack SiC MOSFET module (CCS050M12CM2) is
investigated experimentally using a standard double pulse test method. The upper three and …

Schottky diodes are known to have lower conduction and switching losses compared to PiN
diodes, however, are prone to ringing in the output characteristics. In this paper, analytical …

In this paper, the switching performances of two state-of-the-art half-bridge SiC MOSFET
modules are evaluated using a standard double pulse test methodology. The selected …

In this paper, a novel silicon carbide (SiC) insulated gate bipolar transistor (IGBT) with a 4H–
SiC/Si heterojunction in the buffer layer (HBL) is proposed to improve the turn–off …