Hexagonal boron nitride (hBN) has emerged as a key two-dimensional material. Its
importance is linked to that of graphene because it provides an ideal substrate for graphene …

Driven by the rapid development of autonomous vehicles, ultrasensitive photodetectors with
high signal-to-noise ratio and ultraweak light detection capability are urgently needed. Due …

Photoelectrochemical‐type visible‐blind ultraviolet photodetectors (PEC VBUV PDs) have
gained ever‐growing attention due to their simple fabrication processes, uncomplicated …

Commercialization of high energy density Lithium‐Sulfur (Li‐S) batteries is impeded by
challenges such as polysulfide shuttling, sluggish reaction kinetics, and limited Li+ transport …

Ultrasensitive photodetectors with polarization angle recognition have broad applications in
both civilian and military domains. The emerging 2D materials with in‐plane anisotropy offer …

Silicon (Si), the dominant semiconductor in microelectronics yet lacking optoelectronic
functionalities in UV regions, has been researched extensively to make revolutionary …

Constructing heterostructures and doping are valid ways to improve the optoelectronic
properties of transition metal dichalcogenides (TMDs) and optimize the performance of …

Broad-bandgap semiconductor-based solar-blind ultraviolet (SBUV) photodetectors have
attracted considerable research interest because of their broad applications in missile plume …

Metal-semiconductor field-effect transistors (MESFETs) offer the advantages of efficient gate
control and low power consumption due to the large junction capacitance. However, the …

A self-powered, high-performance graphene/Silicon Carbide (G/4H-SiC) ultraviolet Schottky
junction photodetector has been fabricated, and the effect of using monolayer and bilayer …