Efficiency improvement of PERC solar cell using an aluminum oxide passivation layer prepared via spatial atomic layer deposition and post-annealing

CH Hsu, CW Huang, YS Cho, WY Wu, DS Wuu… - Surface and Coatings …, 2019 - Elsevier
In this study, Al 2 O 3 thin films are deposited on p-type silicon using spatial atomic layer
deposition with trimethylaluminum and H 2 O. The films are annealed in atmosphere (ATM) …

Enhanced Si passivation and PERC solar cell efficiency by atomic layer deposited aluminum oxide with two-step post annealing

CH Hsu, YS Cho, WY Wu, SY Lien, XY Zhang… - Nanoscale research …, 2019 - Springer
In this study, aluminum oxide (Al 2 O 3) films were prepared by a spatial atomic layer
deposition using deionized water and trimethylaluminum, followed by oxygen (O 2), forming …

Understanding surface treatment and ALD AlOx thickness induced surface passivation quality of c-Si Cz wafers

G Kaur, N Dwivedi, X Zheng, B Liao… - IEEE Journal of …, 2017 - ieeexplore.ieee.org
In this paper, the passivation quality of crystalline silicon (c-Si) wafers, when passivated by
atomic layer deposited aluminum oxide (ALD AlO x), is investigated. Specifically, we …

Interface engineering of graphene–silicon Schottky junction solar cells with an Al 2 O 3 interfacial layer grown by atomic layer deposition

A Alnuaimi, I Almansouri, I Saadat, A Nayfeh - RSC advances, 2018 - pubs.rsc.org
The recent progress in graphene (Gr)/silicon (Si) Schottky barrier solar cells (SBSC) has
shown the potential to produce low cost and high efficiency solar cells. Among the different …

High-performance solution-processed pentacene/Al Schottky ultraviolet photodiode with pseudo photovoltaic effect

A Srivastava, S Jit, S Tripathi - IEEE Transactions on Electron …, 2020 - ieeexplore.ieee.org
This article reports a solution-processed pentacene/Al Schottky photodiode for ultraviolet
(UV) detection. A low-cost dispersion method is used to fabricate the pentacene film on ITO …

Amorphous silicon enhanced metal-insulator-semiconductor contacts for silicon solar cells

J Bullock, A Cuevas, D Yan, B Demaurex… - Journal of Applied …, 2014 - pubs.aip.org
Carrier recombination at the metal-semiconductor contacts has become a significant
obstacle to the further advancement of high-efficiency diffused-junction silicon solar cells …

Numerical analysis of tunnel oxide passivated contact solar cell performances for dielectric thin film materials and bulk properties

T Sugiura, S Matsumoto, N Nakano - Solar Energy, 2021 - Elsevier
The performance of tunnel oxide passivated contact (TOPCon) solar cells is evaluated
numerically by changing the tunnel dielectric materials. The conventional SiO 2, Si 3 N 4 …

Modular Assembly of Vibrationally and Electronically Coupled Rhenium Bipyridine Carbonyl Complexes on Silicon

JD Bartl, C Thomas, A Henning, MF Ober… - Journal of the …, 2021 - ACS Publications
Hybrid inorganic/organic heterointerfaces are promising systems for next-generation
photocatalytic, photovoltaic, and chemical-sensing applications. Their performance relies …

Enhancement of silicon solar cell performance by introducing selected defects in the SiO2 passivation layer

D Attafi, A Meftah, R Boumaraf, M Labed, N Sengouga - Optik, 2021 - Elsevier
Deep level defects usually have harmful effect on solar cells. In this work it is shown;
however, that correct incorporation of selected defects in the silicon oxide region of a silicon …

Tunneling atomic layer-deposited aluminum oxide: a correlated structural/electrical performance study for the surface passivation of silicon junctions

K Liu, O Cristini-Robbe, OI Elmi, SL Wang… - Nanoscale Research …, 2019 - Springer
Passivation is a key process for the optimization of silicon pn junctions. Among the different
technologies used to passivate the surface and contact interfaces, alumina is widely used …