In this study, we enlighten about the field effect transistors (FET) and their technologies. As
far as very large integration is concerned, researchers are continuously focusing on scaling …

Recent advances in nanotechnology have led to the development of nano-electro-
mechanical systems (NEMS) such as nanomechanical resonators, which have recently …

Applications of nanowires into future generation nanodevices require a complete
understanding of the mechanical properties of the nanowires. A great research effort has …

Production of high-aspect-ratio silicon (Si) nanowire-based anode for lithium ion batteries is
challenging particularly in terms of controlling wire property and geometry to improve the …

To date, a wide variety of neural tissue implants have been developed for neurophysiology
recording from living tissues. An ideal neural implant should minimize the damage to the …

This paper summarizes some of the essential aspects for the fabrication of functional
devices from bottom-up silicon nanowires. In a first part, the different ways of exploiting …

The primary challenge to exploit the nanowire as a truly one‐dimensional building block in
nanoscale devices is the clear incorporation of scale effects into the operational …

Deformation and fracture mechanisms of ultrathin Si nanowires (NWs), with diameters of
down to∼ 9 nm, under uniaxial tension and bending were investigated by using in situ …

Strain engineering has been used to increase the charge carrier mobility of complementary
metal–oxide–semiconductor transistors as well as to boost and tune the performance of …

In this work, we have developed a contact-printing system to efficiently transfer the bottom-
up and top-down semiconductor nanowires (NWs), preserving their as-grown features with a …