Negative electron affinity of diamond and its application to high voltage vacuum power switches
D Takeuchi, S Koizumi, T Makino, H Kato… - … status solidi (a), 2013 - Wiley Online Library
This paper reviews the electron emission properties of hydrogen terminated diamond
surfaces with a negative electron affinity (NEA), and presents the recent development of 10 …
surfaces with a negative electron affinity (NEA), and presents the recent development of 10 …
Development of an amorphous selenium-based photodetector driven by a diamond cold cathode
T Masuzawa, I Saito, T Yamada, M Onishi… - Sensors, 2013 - mdpi.com
Amorphous-selenium (a-Se) based photodetectors are promising candidates for imaging
devices, due to their high spatial resolution and response speed, as well as extremely high …
devices, due to their high spatial resolution and response speed, as well as extremely high …
Electron emission from conduction band of diamond with negative electron affinity
H Yamaguchi, T Masuzawa, S Nozue, Y Kudo… - Physical Review B …, 2009 - APS
Experimental evidence explaining the extremely low-threshold electron emission from
diamond reported in 1996 has been obtained [K. Okano, Nature (London) 381, 140 (1996)] …
diamond reported in 1996 has been obtained [K. Okano, Nature (London) 381, 140 (1996)] …
Conditions for a carrier multiplication in amorphous-selenium based photodetector
T Masuzawa, S Kuniyoshi, M Onishi, R Kato… - Applied Physics …, 2013 - pubs.aip.org
Amorphous selenium is a promising candidate for high sensitivity photodetector due to its
unique carrier multiplication phenomenon. More than 10 carriers can be generated per …
unique carrier multiplication phenomenon. More than 10 carriers can be generated per …
Electron emission from conduction band of heavily phosphorus doped diamond negative electron affinity surface
T Yamada, T Masuzawa, H Mimura… - Journal of Physics D …, 2015 - iopscience.iop.org
Hydrogen (H)-terminated surfaces of diamond have attracted significant attention due to
their negative electron affinity (NEA), suggesting high-efficiency electron emitters. Combined …
their negative electron affinity (NEA), suggesting high-efficiency electron emitters. Combined …
Transport Properties of Se/As2Se3 Nanolayer Superlattice Fabricated Using Rotational Evaporation
JD John, S Okano, A Sharma… - Advanced Functional …, 2019 - Wiley Online Library
Since their proposal by Esaki, superlattices have been observed to have fascinating features
such as quantum size effects, negative differential resistance, and sequential resonant …
such as quantum size effects, negative differential resistance, and sequential resonant …
Diamond-based electron emission: Structure, properties and mechanisms
LX Gu, K Yang, Y Teng, WK Zhao, GY Zhao… - Chinese …, 2024 - iopscience.iop.org
Diamond has an ultrawide bandgap with excellent physical properties, such as high critical
electric field, excellent thermal conductivity, high carrier mobility, etc. Diamond with a …
electric field, excellent thermal conductivity, high carrier mobility, etc. Diamond with a …
Amorphous selenium photodetector driven by diamond cold cathode
Y Suzuki, H Yamaguchi, K Oonuki… - IEEE electron device …, 2003 - ieeexplore.ieee.org
Amorphous selenium is one of the most promising candidates as photoconducting material
for future imaging devices. It can exhibit ultra-high photosensitivity by using avalanche …
for future imaging devices. It can exhibit ultra-high photosensitivity by using avalanche …
Estimation of parameters in thermal-field emission from diamond
This paper reports on the behavior of electron field emission from diamond thin films at
elevated temperatures. The study is motivated by the possibility of using these structures in …
elevated temperatures. The study is motivated by the possibility of using these structures in …
Electron emission from diamond p–i–n junction diode with heavily P‐doped n+ top layer
D Takeuchi, T Makino, H Kato, H Okushi… - … status solidi (a), 2011 - Wiley Online Library
We found clear improvement in electron emission performances in low injection region of
hydrogenated diamond p–i–n junction diodes with heavily phosphorous‐doped (P‐doped) …
hydrogenated diamond p–i–n junction diodes with heavily phosphorous‐doped (P‐doped) …