In the past decades, group IV nanowires and nanoparticles have been the subject of
extensive research. Beside tremendous progress in morphological control and integration in …

Intersubband optical transitions, refractive index changes, and absorption coefficients are
numerically driven for direct bandgap strained GeSn/Ge quantum dots. The linear, third …

In this paper, we study the resistance versus temperature characteristics of Ge 1-x Sn x thin
film alloys to assess the possibility of using them for temperature sensing layers in …

GeSn alloys have recently emerged as complementary metal–oxide–semiconductor
(CMOS)-compatible materials for optoelectronic applications. Although various photonic …

Strain-engineered self-assembled GeSn/GeSiSn quantum dots in Ge matrix have been
numerically investigated aiming to study their potentiality towards direct bandgap emission …

The impact of vertical electrical field on the electron related linear and 3rd order nonlinear
optical properties are evaluated numerically for pyramidal GeSn quantum dots with different …

The effects of self-organized GeSn/Ge quantum dot's size and shape on the direct band gap
interband emission energy, oscillator strength and radiative lifetime are evaluated. The …

GeSn is expected as a light-emitting material in Si photonics because a direct-bandgap
nature appears with Sn composition above 10%. However, the emission wavelength of …

Over the recent decades, heteroepitaxial layers comprising crystalline stacks of Group-IV
alloys, predominantly SiGe, have been employed to enhance the operational efficiency of …

The electronic structures of Ge1− xSnx nanowires at the direct Γ‐valley and indirect L‐valley
is calculated using k· p effective‐mass theory, and the results demonstrate that Ge1− xSnx …