Improved method for MOSFET voltage rise-time and fall-time estimation in inverter switching loss calculation
Power losses calculation is important in inverter design since it provides a reference for the
inverter thermal management. For MOSFET based inverters, many of MOSFET datasheets …
inverter thermal management. For MOSFET based inverters, many of MOSFET datasheets …
Variation of IGBT switching energy loss with device current: An experimental investigation
Aim of this paper is to study the variations in turn-on and turn-off switching energy losses in
the IGBTs with device current at different DC link voltages and junction temperatures. The …
the IGBTs with device current at different DC link voltages and junction temperatures. The …
Experimental study on the dependence of IGBT switching energy loss on DC link voltage
In traction applications, power electronic converters experience wide variation in DC link
voltage during operation. The purpose of this paper is to study the variations in turn-on and …
voltage during operation. The purpose of this paper is to study the variations in turn-on and …
Measurement of IGBT switching characteristics and loss using coaxial current transformer
Device switching times and switching energy losses are required over a wide range of
practical working conditions for successful design of insulated gate bipolar transistor (IGBT) …
practical working conditions for successful design of insulated gate bipolar transistor (IGBT) …
Comparison of modeling switching losses of an IGBT based on the datasheet and an experimentation
D Oustad, S Lefebvre, M Petit… - 2016 18th European …, 2016 - ieeexplore.ieee.org
This paper focuses on the prediction and the study of the veracity of a losses model (both
conduction and switching losses) in IGBT power modules used for electric vehicle …
conduction and switching losses) in IGBT power modules used for electric vehicle …
Experimental investigation on switching characteristics of IGBTs for traction application
In traction application, inverters need to have high reliability on account of wide variation in
operating conditions, extreme ambient conditions, thermal cycling and varying DC link …
operating conditions, extreme ambient conditions, thermal cycling and varying DC link …
Estimation of the losses in Si and SiC power modules for automotive applications
D Oustad, M Ameziani, D Lhotellier… - PCIM Europe 2017; …, 2017 - ieeexplore.ieee.org
This paper compares 1200 V-120 A Silicon Carbide (SiC) MOSFET module with 1200 and
650 V-100 A Silicon (Si) IGBT module performances in different converter topologies (2 and …
650 V-100 A Silicon (Si) IGBT module performances in different converter topologies (2 and …
Optimierung des elektrischen Antriebsstrangs von Elektrofahrzeugen mit Betrachtung parasitärer Ströme innerhalb der elektrischen Maschine
AM Bubert, RW de Doncker, R Kennel - 2020 - publications.rwth-aachen.de
000803193 520__ $$ aThe objective of this research is to optimize drive trains of electric
vehicles. In order to evaluate different optimization approaches, a modular simulation …
vehicles. In order to evaluate different optimization approaches, a modular simulation …
Low current switching behavior of IGBT and associated spurious tripping in inverters employing VCE de-saturation protection
D Venkatramanan, AK Adapa… - … Conference on Power …, 2016 - ieeexplore.ieee.org
Insulated gate bipolar transistors (IGBT) have evolved significantly and become exceedingly
fast. Today, their typical switching speeds are of the order of 100ns. The resulting dv/dt is …
fast. Today, their typical switching speeds are of the order of 100ns. The resulting dv/dt is …
Experimental study on IGBT voltage and current stresses during switching transitions
Design of reliable power converters requires thorough understanding of the characteristics
of semiconductor devices over wide range of operating and environmental conditions. This …
of semiconductor devices over wide range of operating and environmental conditions. This …