Improved method for MOSFET voltage rise-time and fall-time estimation in inverter switching loss calculation

J Guo, H Ge, J Ye, A Emadi - 2015 IEEE Transportation …, 2015 - ieeexplore.ieee.org
Power losses calculation is important in inverter design since it provides a reference for the
inverter thermal management. For MOSFET based inverters, many of MOSFET datasheets …

Variation of IGBT switching energy loss with device current: An experimental investigation

SC Das, G Narayanan, A Tiwari - 2014 IEEE 6th India …, 2014 - ieeexplore.ieee.org
Aim of this paper is to study the variations in turn-on and turn-off switching energy losses in
the IGBTs with device current at different DC link voltages and junction temperatures. The …

Experimental study on the dependence of IGBT switching energy loss on DC link voltage

SC Das, G Narayanan, A Tiwari - 2014 IEEE International …, 2014 - ieeexplore.ieee.org
In traction applications, power electronic converters experience wide variation in DC link
voltage during operation. The purpose of this paper is to study the variations in turn-on and …

Measurement of IGBT switching characteristics and loss using coaxial current transformer

V Kumar, S Reddy, G Narayanan - 2012 IEEE 5th India …, 2012 - ieeexplore.ieee.org
Device switching times and switching energy losses are required over a wide range of
practical working conditions for successful design of insulated gate bipolar transistor (IGBT) …

Comparison of modeling switching losses of an IGBT based on the datasheet and an experimentation

D Oustad, S Lefebvre, M Petit… - 2016 18th European …, 2016 - ieeexplore.ieee.org
This paper focuses on the prediction and the study of the veracity of a losses model (both
conduction and switching losses) in IGBT power modules used for electric vehicle …

Experimental investigation on switching characteristics of IGBTs for traction application

SC Das, A Tiwari, G Narayanan… - 2012 IEEE International …, 2012 - ieeexplore.ieee.org
In traction application, inverters need to have high reliability on account of wide variation in
operating conditions, extreme ambient conditions, thermal cycling and varying DC link …

Estimation of the losses in Si and SiC power modules for automotive applications

D Oustad, M Ameziani, D Lhotellier… - PCIM Europe 2017; …, 2017 - ieeexplore.ieee.org
This paper compares 1200 V-120 A Silicon Carbide (SiC) MOSFET module with 1200 and
650 V-100 A Silicon (Si) IGBT module performances in different converter topologies (2 and …

Optimierung des elektrischen Antriebsstrangs von Elektrofahrzeugen mit Betrachtung parasitärer Ströme innerhalb der elektrischen Maschine

AM Bubert, RW de Doncker, R Kennel - 2020 - publications.rwth-aachen.de
000803193 520__ $$ aThe objective of this research is to optimize drive trains of electric
vehicles. In order to evaluate different optimization approaches, a modular simulation …

Low current switching behavior of IGBT and associated spurious tripping in inverters employing VCE de-saturation protection

D Venkatramanan, AK Adapa… - … Conference on Power …, 2016 - ieeexplore.ieee.org
Insulated gate bipolar transistors (IGBT) have evolved significantly and become exceedingly
fast. Today, their typical switching speeds are of the order of 100ns. The resulting dv/dt is …

Experimental study on IGBT voltage and current stresses during switching transitions

SC Das, A Tiwari, G Narayanan… - 2013 IEEE Innovative …, 2013 - ieeexplore.ieee.org
Design of reliable power converters requires thorough understanding of the characteristics
of semiconductor devices over wide range of operating and environmental conditions. This …