This paper presents a Junction-less SOI FET with an embedded p+ layer (EP-JLFET) to
obtain extensive volume depletion in 14 nm channel length of the device. The p+ embedded …

In this paper, the gate oxide material and its thickness both are varied in a GaAs based
double gate junctionless MOSFET (DG-JLMOSFET) to observe how this proposed model …

This paper explores the performance characteristics of Germanium (Ge) and Gallium
Antimonide (GaSb) as potential channel materials for finFET devices. The analysis focuses …

The effect of quantum confinement has become significant in terms of its impact on the
scalability and electrostatics of ultra-thin-body double-gate MOSFETs. In this paper, we …

In ultra-thin-body (UTB) MOS devices, the downscaling of the channel length is made
possible through the reduction of the channel thickness and oxide thickness, which in turn …

The effects of both the high-k and low-k sidewall spacers on the performance of a GaAs
based Double Gate Junctionless Metal Oxide Semiconductor Field Effect Transistor (DG …

The impact of recessed gate metal on the performance of double-gate junctionless MOSFET
(DG-JLMOSFET) has been studied considering GaAs as channel material. The geometry of …

We explored the impact of gate work-function variations on Short Channel Effects (SCEs) in
nanoscale Double Gate FinFETs utilizing GaAs, GaSb, GaN, and Si as semiconductor …

In this paper, the impact of Extended Back Gate (EBG) length on GaAs based DG-
JLMOSFET is simulated to analyze its superior behaviors in contrast with conventional DG …

This paper reports recessed GaAs-based double gate junction-less field effect transistor
(DGJLFET) for achieving improved performance that includes threshold voltage roll-off, ON …