Effect of hydrofluorocarbon structure of C3H2F6 isomers on high aspect ratio etching of silicon oxide
HW Tak, HJ Lee, L Wen, BJ Kang, D Sung… - Applied Surface …, 2022 - Elsevier
In this study, using three isomers (1, 1, 1, 3, 3, 3-hexafluoropropane (HFC-236fa), 1, 1, 1, 2,
3, 3-hexafluoropropane (HFC-236ea), 1, 1, 2, 2, 3, 3-hexafluoropropane (HFC-236ca)) …
3, 3-hexafluoropropane (HFC-236ea), 1, 1, 2, 2, 3, 3-hexafluoropropane (HFC-236ca)) …
Contribution of Ion Energy and Flux on High-Aspect Ratio SiO2 Etching Characteristics in a Dual-Frequency Capacitively Coupled Ar/C4F8 Plasma: Individual Ion …
W Jeong, S Kim, Y Lee, C Cho, I Seong, Y You, M Choi… - Materials, 2023 - mdpi.com
As the process complexity has been increased to overcome challenges in plasma etching,
individual control of internal plasma parameters for process optimization has attracted …
individual control of internal plasma parameters for process optimization has attracted …
Research Trend of High Aspect Ratio Contact Etching used in Semiconductor Memory Device Manufacturing
HW Tak, MH Park, JS Lee, CH Choi… - Journal of the Korean …, 2024 - koreascience.kr
In semiconductor memory device manufacturing, the capability for high aspect ratio contact
(HARC) etching determines the density of memory device. Given that there is no …
(HARC) etching determines the density of memory device. Given that there is no …
반도체메모리소자제조에서High Aspect Ratio Contact 식각연구동향
탁현우， 박명호， 이준수， 최찬혁， 김봉선， 장준기… - 한국표면공학회 …, 2024 - dbpia.co.kr
반도체 메모리 소자 제조에서 High Aspect Ratio Contact 식각 연구 동향 Research Trend of
High Aspect Ratio Conta Page 1 <Review Article> ISSN 2288-8403(Online) 한국표면공학회지 …
High Aspect Ratio Conta Page 1 <Review Article> ISSN 2288-8403(Online) 한국표면공학회지 …