SiGe BiCMOS current status and future trends in Europe
P Chevalier, W Liebl, H Rücker… - 2018 IEEE BiCMOS …, 2018 - ieeexplore.ieee.org
This paper reviews the advantages of SiGe BiCMOS technologies and their applications in
the millimeterwave to terahertz domains. The state-of-the-art covering both the Si/SiGe HBTs …
the millimeterwave to terahertz domains. The state-of-the-art covering both the Si/SiGe HBTs …
Emerging transistor technologies capable of terahertz amplification: A way to re-engineer terahertz radar sensors
This paper reviews the state of emerging transistor technologies capable of terahertz
amplification, as well as the state of transistor modeling as required in terahertz electronic …
amplification, as well as the state of transistor modeling as required in terahertz electronic …
A 0.28 THz power-generation and beam-steering array in CMOS based on distributed active radiators
K Sengupta, A Hajimiri - IEEE Journal of Solid-State Circuits, 2012 - ieeexplore.ieee.org
In this paper, we present a scalable transmitter architecture for power generation and beam-
steering at THz frequencies using a centralized frequency reference, sub-harmonic signal …
steering at THz frequencies using a centralized frequency reference, sub-harmonic signal …
-Band Amplifiers With 6-dB Noise Figure and Milliwatt-Level 170–200-GHz Doublers in 45-nm CMOS
B Cetinoneri, YA Atesal, A Fung… - IEEE Transactions on …, 2011 - ieeexplore.ieee.org
This paper presents low-noise-band amplifiers and milliwatt-level 170-200-GHz output
doublers in 45-nm semiconductor-on-insulator (SOI) CMOS technology. The transistors are …
doublers in 45-nm semiconductor-on-insulator (SOI) CMOS technology. The transistors are …
45-nm CMOS SOI technology characterization for millimeter-wave applications
This paper presents an in-depth study of a 45-nm CMOS silicon-on-insulator (SOI)
technology. Several transistor test cells are characterized and the effect of finger width, gate …
technology. Several transistor test cells are characterized and the effect of finger width, gate …
High-efficiency elliptical slot antennas with quartz superstrates for silicon RFICs
JM Edwards, GM Rebeiz - IEEE Transactions on Antennas and …, 2012 - ieeexplore.ieee.org
To increase the efficiency of on-chip patch and slot antennas, a single-layer superstrate is
proposed. An analytical model to calculate the radiation efficiency is presented, and a …
proposed. An analytical model to calculate the radiation efficiency is presented, and a …
Wideband dielectric properties of silicon and glass substrates for terahertz integrated circuits and microsystems
This paper presents a comprehensive study of the optical and electrical dielectric material
properties of six commonly-used silicon and glass substrates at terahertz (THz) frequencies …
properties of six commonly-used silicon and glass substrates at terahertz (THz) frequencies …
Device and IC characterization above 100 GHz
K Yau, E Dacquay, I Sarkas… - IEEE Microwave …, 2012 - ieeexplore.ieee.org
Due to the aggressive scaling of metal-oxide-semiconductor field-effect transistors
(MOSFETs) and silicon germanium SiGe heterojunction bipolar transistors (HBTs), silicon …
(MOSFETs) and silicon germanium SiGe heterojunction bipolar transistors (HBTs), silicon …
A 16-24 GHz CMOS SOI LNA with 2.2 dB mean noise figure
This paper presents a K-band low-noise amplifier (LNA) with a measured mean noise figure
of 2.2 dB at 16-24 GHz. The LNA is fabricated in 45 nm Semiconductor-on-Insulator (SOI) …
of 2.2 dB at 16-24 GHz. The LNA is fabricated in 45 nm Semiconductor-on-Insulator (SOI) …
A 65 GHz LNA/phase shifter with 4.3 dB NF using 45 nm CMOS SOI
This letter presents the first 45 nm CMOS SOI LNA/phase shifter for 60 GHz applications.
The 3 b phase shifter is designed using a switched-LC approach and results in only 6 dB …
The 3 b phase shifter is designed using a switched-LC approach and results in only 6 dB …