This paper presents a survey on existing methods for fault diagnosis and protection of
insulated gate bipolar transistors with special focus on those used in three-phase power …

Silicon-Carbide (SiC) MOSFETs, due to material properties, are designed with smaller
thickness in the gate oxide and a higher electric field compared to Si MOSFETs …

In this paper, a novel failure-detection technique and its analog circuit for insulated gate
bipolar transistors (IGBTs), under open-and short-circuit failures, are proposed. This …

In this paper, a new fault tolerant dc–ac converter-fed induction motor drive is proposed to
maintain motor as close as possible to its desired normal operation under open-and short …

Customer power modules built with the latest IGBT chips may be operated to their extreme
conditions in terms of junction temperature, switching speed and voltage and current ratings …

This paper represents a novel short-circuit detecting scheme using turn-on switching
characteristic of IGBT. The proposed scheme has a simple protection circuit, fast fault …

Today, the technology regarding the bulb lamps is composed by the compact fluorescent
lamps (CFLs) and Light Emitting Diode (LED) lamps. The LED lamps represent the new …

As a common practice into the use of silicon semiconductor devices, the capability of a
discrete power switch may by augmented by using the parallel connection of several single …

Power semiconductors need to momentarily operate in the active area of DC solid-state
circuit breakers (DC-SSCB) to limit the fault current. During this interval, a severe voltage …

This paper proposes a scheme based on the use of unsupervised machine learning
approach and a drift detection mechanism in order to perform an early fault diagnosis of …