To achieve higher power density at a reduced cost, it is more advantageous to utilize the
inherent body diode found in silicon carbide MOSFETs (SiC MOSFETs) rather than relying …

Silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (mosfet s) are
becoming increasingly prevalent in various power electronic applications. However, their …

Gate oxide degradation under dynamic gate stress has been demonstrated as a reliability
issue for SiC MOSFETs recently. Investigating the influence of dynamic drain-source voltage …

Accurate modeling of switching loss is critical for SiC MOSFETs as well as power converters.
However, previous “static” time-independent models did not consider the impact of gate …

Gate-oxide degradation caused by bias temperature instability (BTI) is one of the most
critical reliability issues for silicon carbide (SiC) metal–oxide–semiconductor-field-effect …

In this article, we have investigated the sensing principle and method of gate-oxide
degradation of SiC power mosfet s based on fingerprints of voltage switching transient. The …

Silicon carbide (SiC) based power semiconductor devices outperform their silicon
counterparts in applications facing harsh environments where efficient and reliable …

Gate-oxide degradation is a critical reliability issue that limits the widespread application of
SiC MOSFETs. As an effective way to improve the reliability of SiC MOSFETs, the online …

Online accurate junction temperature monitoring improves the reliability of power converters
throughout the lifetime of SiC MOSFETs. Without the correction, the methods based on the …

Threshold voltage (VTH) instability affects the reliability of silicon carbide (SiC) MOSFETs. In
this article, the influence of gate bias (VGS) and high temperature on VTH instability is …